Emission of strained-layer InGaAs quantum well under high-injection level: study of bandfilling and broadening effects

1996 ◽  
Author(s):  
Irina V. Akimova ◽  
Petr G. Eliseev
Keyword(s):  
Quantum Well ◽  
Injection Level ◽  
Strained Layer ◽  
High Injection Level ◽  
High Injection ◽  
Ingaas Quantum Well

IR and MW Absorption Techniques for Bulk and Surface Recombination Control in High-Quaiity Silicon

1995 ◽  
Vol 386 ◽  
Author(s):  
A. Kaniava ◽  
U. Menczigar ◽  
J. Vanhellemont ◽  
J. Poortmans ◽  
A. L. P. Rotondaro ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Silicon Substrates ◽  
Injection Level ◽  
Effective Lifetime ◽  
Carrier Recombination ◽  
High Injection Level ◽  
High Injection ◽  
Wide Range ◽  
Recombination Velocity

ABSTRACTThe carrier recombination rate in high-quality FZ and Cz silicon substrates is studied by contactless infrared and microwave absorption techniques. Different surface treatments covering a wide range of surface recombination velocity have been used for the separation of bulk and surface recombination components and evaluating of the efficiency of passivation. Limitations of effective lifetime approach are analyzed specific for low and high injection level. Sensitivity limits of the techniques for iron contamination are discussed

Investigation of Porous Silicon Films Structure by Optical Methods

1992 ◽  
Vol 283 ◽  
Author(s):  
P. Basmaji ◽  
V. Grivickas ◽  
G. I. Surdutovich ◽  
R. Vitlina ◽  
V. S. Bagnato
Keyword(s):  
Porous Silicon ◽  
High Energy ◽  
Optical Methods ◽  
Injection Level ◽  
Critical Porosity ◽  
Quantum Size ◽  
High Injection Level ◽  
High Injection ◽  
Photoconductivity Decay ◽  
Band Absorption

ABSTRACTThe structure of aged porous silicon (PS) has been investigated using reflectivity, photoluminescence (PL), optical absorption and photoconductivity decay. An optical anisotropy in a perpendicular to surface direction is observed for PS samples below a critical porosity of 70%. The photostability of the PL spectra imply three different structures of PS, these should be attributed to quantum size structures, polymeric type structures and fluor-related structures. The absorption edge is deconvoluted into a band-to-band absorption with energy ranging between Eg = 1.6–2 eV and an absorption shoulder at hu ≤ Eg. The high energy PL band around 2.3 eV resembles that of fluoroindate glass. The observed rapid lifetime at high injection level is attributed to excitonic Auger-type recombination.

Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level

2016 ◽  
Vol 121 ◽  
pp. 41-46 ◽  
Author(s):  
Tigran T. Mnatsakanov ◽  
Michael E. Levinshtein ◽  
Alexey G. Tandoev ◽  
Sergey N. Yurkov ◽  
John W. Palmour
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection ◽  
Injection Level ◽  
High Injection Level ◽  
High Injection ◽  
Current Voltage ◽  
Current Voltage Characteristics

High-injection behavior of InGaAs quantum well

1999 ◽  
Author(s):  
Petr G. Eliseev ◽  
Irina V. Akimova
Keyword(s):  
Quantum Well ◽  
High Injection ◽  
Ingaas Quantum Well

Strained‐layer InGaAs quantum well lasers emitting at 1.5 μm grown by chemical beam epitaxy

1992 ◽  
Vol 61 (3) ◽  
pp. 318-320 ◽  
Author(s):  
Hideo Sugiura ◽  
Yoshio Noguchi ◽  
Ryuzo Iga ◽  
Takeshi Yamada ◽  
Hidehiko Kamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Chemical Beam Epitaxy ◽  
Strained Layer ◽  
Ingaas Quantum Well

scholarly journals Unified model for p-n junction current-voltage characteristics

2011 ◽  
Vol 1 (1) ◽  
Author(s):  
Miron Cristea
Keyword(s):  
Carrier Lifetime ◽  
Parameter Extraction ◽  
Injection Level ◽  
High Injection Level ◽  
High Injection ◽  
Current Voltage ◽  
Basic Parameters ◽  
Current Voltage Characteristics ◽  
High Level ◽  
Charge Carrier Lifetime

AbstractCurrent-voltage p-n junction characteristics have been analyzed mainly at low injection levels. The high injection level region of the I/V characteristic allows the possibility of determining basic parameters of the semiconductor material, like the bulk doping concentration and charge carrier lifetime. Based on a new theoretical model of the p-n junction characteristics, valid for both low level and high level regions, a new general equation of the p-n junction is presented. It can serve for parameter extraction of semiconductor devices.

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