Room‐temperature negative differential resistance in strained‐layer GaAs‐AlGaAs‐InGaAs quantum well heterostructures

G. S. Lee; K. Y. Hsieh; R. M. Kolbas

doi:10.1063/1.97271

Room‐temperature negative differential resistance in strained‐layer GaAs‐AlGaAs‐InGaAs quantum well heterostructures

Applied Physics Letters ◽

10.1063/1.97271 ◽

1986 ◽

Vol 49 (22) ◽

pp. 1528-1530 ◽

Cited By ~ 14

Author(s):

G. S. Lee ◽

K. Y. Hsieh ◽

R. M. Kolbas

Keyword(s):

Quantum Well ◽

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Strained Layer ◽

Ingaas Quantum Well

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Negative differential resistance in a strained‐layer quantum‐well structure with a bound state

Journal of Applied Physics ◽

10.1063/1.339315 ◽

1987 ◽

Vol 62 (8) ◽

pp. 3453-3456 ◽

Cited By ~ 4

Author(s):

G. S. Lee ◽

K. Y. Hsieh ◽

R. M. Kolbas

Keyword(s):

Quantum Well ◽

Negative Differential Resistance ◽

Differential Resistance ◽

Bound State ◽

Strained Layer ◽

Quantum Well Structure

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Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature

IEEE Electron Device Letters ◽

10.1109/55.62985 ◽

1990 ◽

Vol 11 (10) ◽

pp. 428-430 ◽

Cited By ~ 7

Author(s):

R.L. Wang ◽

Y.-K. Su ◽

Y.H. Wang ◽

K.F. Yarn

Keyword(s):

Quantum Well ◽

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Double Barrier ◽

Delta Doping

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Room-Temperature Negative Differential Resistance in Amorphous Carbon: The Role of Electron Trapping Defects at Device Interfaces

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3044021 ◽

2020 ◽

pp. 1-6

Author(s):

Phuong Y. Le ◽

Amanda Gazzana ◽

Billy J. Murdoch ◽

Dougal G. McCulloch ◽

David R. McKenzie ◽

...

Keyword(s):

Amorphous Carbon ◽

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Electron Trapping

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A GSMBE grown GaInP/GaAs narrow base DHBT exhibiting N-shape negative differential resistance with variable peak-to-valley current ratio up to 1/spl times/10/sup 7/ at room temperature

IEEE Electron Device Letters ◽

10.1109/55.285373 ◽

1994 ◽

Vol 15 (2) ◽

pp. 60-62 ◽

Cited By ~ 19

Author(s):

S.S. Lu ◽

Y.J. Wang

Keyword(s):

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Current Ratio ◽

Narrow Base

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Light-controllable room temperature negative differential resistance in deep-trench type nitride–oxide tunneling device and its applications

Applied Physics Letters ◽

10.1063/1.1476959 ◽

2002 ◽

Vol 80 (18) ◽

pp. 3271-3273 ◽

Cited By ~ 2

Author(s):

Fen Chen ◽

Baozhen Li ◽

Kai D Feng

Keyword(s):

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Deep Trench ◽

Nitride Oxide

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Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface

ACS Nano ◽

10.1021/acsnano.9b03342 ◽

2019 ◽

Vol 13 (7) ◽

pp. 8193-8201 ◽

Cited By ~ 14

Author(s):

Sidi Fan ◽

Quoc An Vu ◽

Sanghyub Lee ◽

Thanh Luan Phan ◽

Gyeongtak Han ◽

...

Keyword(s):

Negative Differential Resistance ◽

Room Temperature ◽

Van Der Waals ◽

Differential Resistance ◽

Van Der Waals Heterostructures

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Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Advanced Functional Materials ◽

10.1002/adfm.202007216 ◽

2020 ◽

pp. 2007216

Author(s):

Ding Wang ◽

Zhaoying Chen ◽

Juan Su ◽

Tao Wang ◽

Baoqing Zhang ◽

...

Keyword(s):

Electron Transport ◽

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Double Barrier

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Room temperature negative differential resistance in molecular nanowires

Journal of Materials Chemistry ◽

10.1039/b203047k ◽

2002 ◽

Vol 12 (10) ◽

pp. 2927-2930 ◽

Cited By ~ 62

Author(s):

Irena Kratochvilova ◽

Milan Kocirik ◽

Adriana Zambova ◽

Jeremiah Mbindyo ◽

Thomas E. Mallouk ◽

...

Keyword(s):

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance

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Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

Active and Passive Electronic Components ◽

10.1080/08827510213497 ◽

2002 ◽

Vol 25 (3) ◽

pp. 245-248

Author(s):

K. F. Yarn

Keyword(s):

Schottky Diode ◽

Negative Differential Resistance ◽

Room Temperature ◽

Thermionic Emission ◽

Differential Resistance ◽

Tunneling Effect ◽

Peak Current Density ◽

Interband Tunneling ◽

First Time ◽

Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

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