Non-destructive contactless tool for semiconductor wafer inspection

Author(s):  
O. V. Astafiev
1998 ◽  
Author(s):  
Chi Hau Chen ◽  
Tzu-Hung Cheng ◽  
Wo-Tak Wu ◽  
Shawn Driscoll

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2904
Author(s):  
Dong Jun Oh ◽  
Seung Guk Baek ◽  
Kyung-Tae Nam ◽  
Ja Choon Koo

This paper proposes a simple tracking and synchronization control of a dual-drive system using inversion-based iterative learning control (IILC), which reformulates the model at each iteration based on input/output data. By the power of the IILC, this work simplifies the dual-actuator-driven dynamic system control problem that is normally addressed with a MIMO method. This work also shows the potential of the IILC for nonlinear system applications by reformulating the model at each iteration based on the input/output data. An analytical representation of the iteration-varying IILC followed by simulations is provided. A set of physical system testings with a dual-motor gantry and a semiconductor wafer inspection robotic system are carried out to verify the control method.


2020 ◽  
Vol 17 (6) ◽  
pp. 57-59
Author(s):  
Siva Hemanth Valluru

Author(s):  
Ramesh Jain ◽  
A. Ravishankar Rao ◽  
Ali Kayaalp ◽  
Charles Cole

Author(s):  
J W Steeds

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.


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