Ambipolar diffusion length measurements in a-Si:H by constant photocurrent method (CPM)

1995 ◽  
Author(s):  
Valerie A. Ligachov
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Length Measurements

A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Vieira ◽  
R. Martins ◽  
E. Fortunato ◽  
F. Soares ◽  
L. Guimaraes
Keyword(s):  
Laser Beam ◽  
Transient Analysis ◽  
Diffusion Length ◽  
Transport Equations ◽  
Ambipolar Diffusion ◽  
Schottky Barriers ◽  
Effective Lifetime ◽  
Asymmetrical Distribution ◽  
Flying Spot

ABSTRACTThe determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FST. This technique consists in the transient analysis of the photocurrent/photopotential induced by a laser beam that moves perpendicularly to the structure with a constant motion ratio, at different velocities. Taking into account the competition between the diffusion/drift velocities of the excess carriers and the velocity of the flying spot, it is possible to solve the transport equations and to compute separately L* and τ*, from the asymmetrical distribution responses.

Lateral Dopant Diffusion Length Measurements Using Silicon Microring Resonators

2018 ◽  
Vol 30 (24) ◽  
pp. 2163-2166 ◽  
Author(s):  
Vadivukkarasi Jeyaselvan ◽  
Shankar Kumar Selvaraja
Keyword(s):  
Diffusion Length ◽  
Microring Resonators ◽  
Dopant Diffusion ◽  
Length Measurements

Proceedings modelling of SiC-PiN diode with adjust of ambipolar diffusion length

SPEEDAM 2010 ◽  
2010 ◽  
Author(s):  
L. H. Gonzalez ◽  
E. B. Brito ◽  
S. N. Perez ◽  
M. A. Rodriguez ◽  
J. C. Yris
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Pin Diode

Ambipolar diffusion length and photoconductivity measurements on ‘‘midgap’’ hydrogenated microcrystalline silicon

1996 ◽  
Vol 80 (9) ◽  
pp. 5111-5115 ◽  
Author(s):  
M. Goerlitzer ◽  
N. Beck ◽  
P. Torres ◽  
J. Meier ◽  
N. Wyrsch ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Microcrystalline Silicon

Optical measurement of the ambipolar diffusion length in a ZnCdSe–ZnSe single quantum well

1997 ◽  
Vol 81 (1) ◽  
pp. 536-538 ◽  
Author(s):  
F. P. Logue ◽  
D. T. Fewer ◽  
S. J. Hewlett ◽  
J. F. Heffernan ◽  
C. Jordan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diffusion Length ◽  
Optical Measurement ◽  
Ambipolar Diffusion ◽  
Single Quantum ◽  
Single Quantum Well
Sign in / Sign up

Export Citation Format

Share Document