Ambipolar diffusion length measurements on hydrogenated amorphous siliconp‐i‐nstructures

1988 ◽  
Vol 53 (20) ◽  
pp. 1949-1951 ◽  
Author(s):  
I. Balberg ◽  
A. E. Delahoy ◽  
H. A. Weakliem
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Length Measurements ◽  
Hydrogenated Amorphous

Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD

1999 ◽  
Vol 557 ◽  
Author(s):  
Qi Wang ◽  
Eugene Iwaniczko ◽  
Yueqin Xu ◽  
Brent P. Nelson ◽  
A. H. Mahan
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Diffusion Length ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Ambipolar Diffusion ◽  
Hot Wire ◽  
Top Contact ◽  
Hydrogenated Amorphous

AbstractWe report progress in hydrogenated amorphous silicon n-i-p solar cells with the i-layer grown by the hot-wire chemical vapor deposition technique. Early research showed that we grew device-quality materials with low saturated defect density (2 × 106/cm3), high initial ambipolar diffusion length (~2000 Å) and low hydrogen content (<1%). One of the major barriers to implementing this material into solar cells is the high substrate temperature required (>400°C). We re-assess the effects of low substrate temperature on the property of the films and the performance of the solar cells as an alternative avenue to solving this problem. We find that the material grown at 300°C can have similar values of saturated defect density and ambipolar diffusion length as the one grown greater than 400°C. We also study the effect of i-layer substrate temperature ranging from 280° to 440°C for n-i-p solar cells. We now consistently grow devices with Fill Factor (FF) greater than 0.66, with the best close to 0.70 at lower substrate temperature. A collaboration with United Solar System, in where they grew the p-layer and top contact, produced devices with initial efficiencies as high as 9.8%. We produce n-i-p solar cells with initial efficiencies as high as 8% when we grow all the hydrogenated amorphous silicon and top contact layers. All these i-layers are grown at deposition rates of 16 to 18 Å/sec. We need to further improve our p-layer and transparent conductor layer to equal the collaborative cell efficiency. We also report light-soaking results of these devices.

A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Vieira ◽  
R. Martins ◽  
E. Fortunato ◽  
F. Soares ◽  
L. Guimaraes
Keyword(s):  
Laser Beam ◽  
Transient Analysis ◽  
Diffusion Length ◽  
Transport Equations ◽  
Ambipolar Diffusion ◽  
Schottky Barriers ◽  
Effective Lifetime ◽  
Asymmetrical Distribution ◽  
Flying Spot

ABSTRACTThe determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FST. This technique consists in the transient analysis of the photocurrent/photopotential induced by a laser beam that moves perpendicularly to the structure with a constant motion ratio, at different velocities. Taking into account the competition between the diffusion/drift velocities of the excess carriers and the velocity of the flying spot, it is possible to solve the transport equations and to compute separately L* and τ*, from the asymmetrical distribution responses.

Lateral Dopant Diffusion Length Measurements Using Silicon Microring Resonators

2018 ◽  
Vol 30 (24) ◽  
pp. 2163-2166 ◽  
Author(s):  
Vadivukkarasi Jeyaselvan ◽  
Shankar Kumar Selvaraja
Keyword(s):  
Diffusion Length ◽  
Microring Resonators ◽  
Dopant Diffusion ◽  
Length Measurements

Proceedings modelling of SiC-PiN diode with adjust of ambipolar diffusion length

SPEEDAM 2010 ◽  
2010 ◽  
Author(s):  
L. H. Gonzalez ◽  
E. B. Brito ◽  
S. N. Perez ◽  
M. A. Rodriguez ◽  
J. C. Yris
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Pin Diode

Ambipolar diffusion length and photoconductivity measurements on ‘‘midgap’’ hydrogenated microcrystalline silicon

1996 ◽  
Vol 80 (9) ◽  
pp. 5111-5115 ◽  
Author(s):  
M. Goerlitzer ◽  
N. Beck ◽  
P. Torres ◽  
J. Meier ◽  
N. Wyrsch ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Microcrystalline Silicon
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