Ambipolar diffusion length and photoconductivity measurements on ‘‘midgap’’ hydrogenated microcrystalline silicon

1996 ◽  
Vol 80 (9) ◽  
pp. 5111-5115 ◽  
Author(s):  
M. Goerlitzer ◽  
N. Beck ◽  
P. Torres ◽  
J. Meier ◽  
N. Wyrsch ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Microcrystalline Silicon

Transport anisotropy in microcrystalline silicon studied by measurement of ambipolar diffusion length

2001 ◽  
Vol 89 (3) ◽  
pp. 1800 ◽  
Author(s):  
V. Švrček ◽  
I. Pelant ◽  
J. Kočka ◽  
P. Fojtı́k ◽  
B. Rezek ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Microcrystalline Silicon

A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Vieira ◽  
R. Martins ◽  
E. Fortunato ◽  
F. Soares ◽  
L. Guimaraes
Keyword(s):  
Laser Beam ◽  
Transient Analysis ◽  
Diffusion Length ◽  
Transport Equations ◽  
Ambipolar Diffusion ◽  
Schottky Barriers ◽  
Effective Lifetime ◽  
Asymmetrical Distribution ◽  
Flying Spot

ABSTRACTThe determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FST. This technique consists in the transient analysis of the photocurrent/photopotential induced by a laser beam that moves perpendicularly to the structure with a constant motion ratio, at different velocities. Taking into account the competition between the diffusion/drift velocities of the excess carriers and the velocity of the flying spot, it is possible to solve the transport equations and to compute separately L* and τ*, from the asymmetrical distribution responses.

Proceedings modelling of SiC-PiN diode with adjust of ambipolar diffusion length

SPEEDAM 2010 ◽  
2010 ◽  
Author(s):  
L. H. Gonzalez ◽  
E. B. Brito ◽  
S. N. Perez ◽  
M. A. Rodriguez ◽  
J. C. Yris
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Pin Diode

Optical measurement of the ambipolar diffusion length in a ZnCdSe–ZnSe single quantum well

1997 ◽  
Vol 81 (1) ◽  
pp. 536-538 ◽  
Author(s):  
F. P. Logue ◽  
D. T. Fewer ◽  
S. J. Hewlett ◽  
J. F. Heffernan ◽  
C. Jordan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diffusion Length ◽  
Optical Measurement ◽  
Ambipolar Diffusion ◽  
Single Quantum ◽  
Single Quantum Well

Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys

1989 ◽  
Vol 149 ◽  
Author(s):  
Liyou Yang ◽  
A. Catalano ◽  
R. R. Arya ◽  
M. S. Bennett ◽  
I. Balberg
Keyword(s):  
Light Intensity ◽  
Transport Properties ◽  
Diffusion Length ◽  
Boron Doping ◽  
Ambipolar Diffusion ◽  
Doping Effect ◽  
Intensity Dependence ◽  
Low Level

ABSTRACTLarge simultaneous changes in ambipolar diffusion length and d.c. photoconductivity are observed with boron doping below 5ppm. We show that the observation can be explained successfully with a model for the doping effect, which is also consistent with earlier studies. The μτ products for both carriers as a function of doping are determined. The light intensity dependence of diffusion length and photoconductivity is also discussed.

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