Simulation analysis of a miniaturized electron optics of the massively parallel electron-beam direct-write (MPEBDW) for multi-column system

2017 ◽  
Author(s):  
Akira Kojima ◽  
Naokatsu Ikegami ◽  
Hiroshi Miyaguchi ◽  
Takashi Yoshida ◽  
Ryutaro Suda ◽  
...  
Keyword(s):  
Electron Beam ◽  
Simulation Analysis ◽  
Massively Parallel ◽  
Electron Optics ◽  
Direct Write ◽  
Column System

Active-matrix nc-Si electron emitter array for massively parallel direct-write electron-beam system

2012 ◽  
Author(s):  
N. Ikegami ◽  
T. Yoshida ◽  
A. Kojima ◽  
H. Ohyi ◽  
N. Koshida ◽  
...  
Keyword(s):  
Electron Beam ◽  
Massively Parallel ◽  
Direct Write ◽  
Active Matrix ◽  
Electron Emitter ◽  
Beam System ◽  
Emitter Array

ELECTRON BEAM DIRECT WRITE EFFECTS ON CMOS DEVICES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-291-C4-294
Author(s):  
K. BARLOW
Keyword(s):  
Electron Beam ◽  
Direct Write

scholarly journals Expanding 3D Nanoprinting Performance by Blurring the Electron Beam

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 115
Author(s):  
Lukas Seewald ◽  
Robert Winkler ◽  
Gerald Kothleitner ◽  
Harald Plank
Keyword(s):  
Electron Beam ◽  
Direct Write ◽  
Design Flexibility ◽  
Individual Branch ◽  
Inclination Angles ◽  
3D Architecture ◽  
20 Nm ◽  
Surface Morphologies ◽  
Nm Range ◽  
Mechanical Rigidity

Additive, direct-write manufacturing via a focused electron beam has evolved into a reliable 3D nanoprinting technology in recent years. Aside from low demands on substrate materials and surface morphologies, this technology allows the fabrication of freestanding, 3D architectures with feature sizes down to the sub-20 nm range. While indispensably needed for some concepts (e.g., 3D nano-plasmonics), the final applications can also be limited due to low mechanical rigidity, and thermal- or electric conductivities. To optimize these properties, without changing the overall 3D architecture, a controlled method for tuning individual branch diameters is desirable. Following this motivation, here, we introduce on-purpose beam blurring for controlled upward scaling and study the behavior at different inclination angles. The study reveals a massive boost in growth efficiencies up to a factor of five and the strong delay of unwanted proximal growth. In doing so, this work expands the design flexibility of this technology.

Fabrication of submicron microwave bipolar transistors by direct write electron beam lithography

1992 ◽  
Vol 19 (1-4) ◽  
pp. 737-740
Author(s):  
M.N. Webster ◽  
A.H. Verbruggen ◽  
J. Romijn ◽  
H.F.F. Jos ◽  
P.M.A. Moors ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Bipolar Transistors ◽  
Direct Write

scholarly journals Resist Design Considerations for Direct Write and Projection Electron-Beam Lithography Technologies.

1996 ◽  
Vol 9 (4) ◽  
pp. 663-675 ◽  
Author(s):  
Anthony E. Novembre ◽  
Regine G. Tarascon ◽  
Steven D. Berger ◽  
Chris J. Biddick ◽  
Myrtle I. Blakey ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
Design Considerations

Electron Optics of an Electron-Beam Lithographic System

1977 ◽  
Vol 21 (6) ◽  
pp. 514-521 ◽  
Author(s):  
J. L. Mauer ◽  
H. C. Pfeiffer ◽  
W. Stickel
Keyword(s):  
Electron Beam ◽  
Electron Optics
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