A detail investigation on quaternary and ternary capped strain coupled quantum dots based infrared photodetectors and effect of rapid thermal annealing temperature

2015 ◽  
Author(s):  
H. Ghadi ◽  
S. Adhikary ◽  
S. Shetty ◽  
A. Balgarkashi ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Infrared Photodetectors ◽  
Coupled Quantum Dots ◽  
Rapid Thermal Annealing Temperature

Influence of rapid thermal annealing temperature on the electrical properties of Be‐implanted GaAsp‐njunctions

1988 ◽  
Vol 52 (26) ◽  
pp. 2244-2246 ◽  
Author(s):  
T. J. de Lyon ◽  
H. C. Casey ◽  
H. Z. Massoud ◽  
M. L. Timmons ◽  
J. A. Hutchby ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rapid Thermal Annealing Temperature

scholarly journals Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1324
Author(s):  
Hanyeong Yu ◽  
Changhwan Shin
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Process Condition ◽  
Lead Zirconate ◽  
Rate Of Change ◽  
Ferroelectric Capacitor ◽  
Ferroelectric Layer ◽  
Polarization Characteristics ◽  
Rapid Thermal Annealing Temperature

A metal-ferroelectric-metal (MFM) capacitor was fabricated to investigate the effect of the rate-of-change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor’s ferroelectric layer [lead zirconate oxide (PZT)]. Remnant polarization (2 × Pr) is measured and monitored while performing the RTA process at 500 °C–700 °C. It turned out that, for a given target/final temperature in the RTA process, 2Pr of the ferroelectric layer decreases with a higher rate-of-change of temperature. This can provide a way to adjust the properties of the PZT layer, depending on the RTA process condition (i.e., using various rate-of-changes of temperature) for a given final/target temperature.

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