Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2Ga0.8As wells

2009 ◽  
Vol 246 (4) ◽  
pp. 880-884 ◽  
Author(s):  
N. Arpatzanis ◽  
N. A. Hastas ◽  
C. A. Dimitriadis ◽  
G. Konstantinidis ◽  
C. Charitidis ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Inas Quantum Dots ◽  
Rapid Thermal Annealing Temperature ◽  
Annealing Temperature Dependence

Effects of Rapid Thermal Annealing on the Optical Properties of InAs Quantum Dots with Asymmetric InGaAs Layers

2009 ◽  
Vol 54 (4) ◽  
pp. 1655-1659 ◽  
Author(s):  
Do Yeob Kim ◽  
Min Su Kim ◽  
Tae Hoon Kim ◽  
Ghun Sik Kim ◽  
Hyun Young Choi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Inas Quantum Dots

Influence of rapid thermal annealing temperature on the electrical properties of Be‐implanted GaAsp‐njunctions

1988 ◽  
Vol 52 (26) ◽  
pp. 2244-2246 ◽  
Author(s):  
T. J. de Lyon ◽  
H. C. Casey ◽  
H. Z. Massoud ◽  
M. L. Timmons ◽  
J. A. Hutchby ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rapid Thermal Annealing Temperature

scholarly journals Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1324
Author(s):  
Hanyeong Yu ◽  
Changhwan Shin
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Process Condition ◽  
Lead Zirconate ◽  
Rate Of Change ◽  
Ferroelectric Capacitor ◽  
Ferroelectric Layer ◽  
Polarization Characteristics ◽  
Rapid Thermal Annealing Temperature

A metal-ferroelectric-metal (MFM) capacitor was fabricated to investigate the effect of the rate-of-change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor’s ferroelectric layer [lead zirconate oxide (PZT)]. Remnant polarization (2 × Pr) is measured and monitored while performing the RTA process at 500 °C–700 °C. It turned out that, for a given target/final temperature in the RTA process, 2Pr of the ferroelectric layer decreases with a higher rate-of-change of temperature. This can provide a way to adjust the properties of the PZT layer, depending on the RTA process condition (i.e., using various rate-of-changes of temperature) for a given final/target temperature.

Sign in / Sign up

Export Citation Format

Share Document