Influence of rapid thermal annealing temperature on the electrical properties of Be‐implanted GaAsp‐njunctions

1988 ◽  
Vol 52 (26) ◽  
pp. 2244-2246 ◽  
Author(s):  
T. J. de Lyon ◽  
H. C. Casey ◽  
H. Z. Massoud ◽  
M. L. Timmons ◽  
J. A. Hutchby ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rapid Thermal Annealing Temperature

Improvement of Ferroelectric and Electrical Properties of Sol-Gel deposited Bi4Ti3Oi2 Thin Films by Multiple Rapid Thermal Annealing Techniques

2004 ◽  
Vol 830 ◽  
Author(s):  
Hua. Wang ◽  
Minfang Ren
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Annealing Temperature Increase ◽  
Si Substrates ◽  
Surface Increase

AbstractFerroelectric Bi4Ti3O12 thin films were fabricated by sol-gel method with multiple rapid thermal annealing (MRTA) techniques on Pt/Ti/SiO2/p-Si substrates. The effect of annealing temperature on crystallinity, ferroelectric and electrical properties of Bi4Ti3O12 films derived by MRTA and by normal RTA were investigated. The results reveal that the grain size and the roughness of surface increase with the annealing temperature increase, but the maximal remnant polarization of Bi4Ti3O12

scholarly journals Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1324
Author(s):  
Hanyeong Yu ◽  
Changhwan Shin
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Process Condition ◽  
Lead Zirconate ◽  
Rate Of Change ◽  
Ferroelectric Capacitor ◽  
Ferroelectric Layer ◽  
Polarization Characteristics ◽  
Rapid Thermal Annealing Temperature

A metal-ferroelectric-metal (MFM) capacitor was fabricated to investigate the effect of the rate-of-change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor’s ferroelectric layer [lead zirconate oxide (PZT)]. Remnant polarization (2 × Pr) is measured and monitored while performing the RTA process at 500 °C–700 °C. It turned out that, for a given target/final temperature in the RTA process, 2Pr of the ferroelectric layer decreases with a higher rate-of-change of temperature. This can provide a way to adjust the properties of the PZT layer, depending on the RTA process condition (i.e., using various rate-of-changes of temperature) for a given final/target temperature.

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