Aninsituhard mask block copolymer approach for the fabrication of ordered, large scale, horizontally aligned, Si nanowire arrays on Si substrate

2014 ◽  
Author(s):  
Tandra Ghoshal ◽  
Ramsankar Senthamaraikannan ◽  
Matthew T. Shaw ◽  
Justin D. Holmes ◽  
Michael A. Morris
Keyword(s):  
Block Copolymer ◽  
Large Scale ◽  
Nanowire Arrays ◽  
Si Substrate ◽  
Si Nanowire

Fabrication of Ordered, Large Scale, Horizontally-Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach

2013 ◽  
Vol 26 (8) ◽  
pp. 1207-1216 ◽  
Author(s):  
Tandra Ghoshal ◽  
Ramsankar Senthamaraikannan ◽  
Matthew T. Shaw ◽  
Justin D. Holmes ◽  
Michael A. Morris
Keyword(s):  
Block Copolymer ◽  
Large Scale ◽  
Nanowire Arrays ◽  
Hard Mask ◽  
Si Nanowire

Fabrication of ultra-dense sub-10 nm in-plane Si nanowire arrays by using a novel block copolymer method: optical properties

Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 2177-2187 ◽  
Author(s):  
Tandra Ghoshal ◽  
Christos Ntaras ◽  
John O'Connell ◽  
Matthew T. Shaw ◽  
Justin D. Holmes ◽  
...  
Keyword(s):  
Optical Properties ◽  
Block Copolymer ◽  
Nanowire Arrays ◽  
Si Nanowire

Size dependence in one-dimensional nano-materials and one-dimensional heterojunctions

2006 ◽  
Vol 931 ◽  
Author(s):  
Jing Zhu ◽  
Jun Luo ◽  
Changqiang Chen ◽  
Yu Shi ◽  
Xiaohua Liu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electrical Transport ◽  
Large Scale ◽  
Zno Nanowires ◽  
Nanowire Arrays ◽  
Surface Relaxation ◽  
Nano Materials ◽  
One Dimensional ◽  
Si Nanowire ◽  
Ag Nanowires

ABSTRACTOne-dimensional (1D) nano-materials have attracted a plenty of attention due to their novel structures and properties. Our group has carried out researches on synthesis, structure and property of 1D nano-materials, which are introduced in this paper. First, size effects on the crystal structure of Ag nanowires and on Young's modulus in [0001] oriented ZnO nanowires, respectively, have been revealed and modeled. The former is concerning the systemic energy of an individual Ag nanowire. The latter is caused by the surface stiffening effect arising from surface relaxation induced bond length contractions in the ZnO nanowires. Second, structures of 1D helical nano-materials including SWCNT (single-walled carbon nanotube), B-DNA and MWCNT (mutli-walled carbon nanotube) have been studied. It is shown that there is strong orientation dependence of diffraction intensities from SWCNT and B-DNA, which can even result in certain layer lines missing in their diffraction patterns. Also, it is demonstrated that high-resolution transmission electron microscope (TEM) images of sidewall regions of MWCNTs are not structural ones and from the interference of the {0002} and the {1011} diffraction waves. Third, arrays of four types of 1D heterojunctions have been synthesized. Among these 1D heterojunctions, the interfacial structures of the Ni/MWCNT/a-CNT(amorphous carbon nanotube) heterojunctions show that multiple outer walls in the MWCNTs can simultaneously participate in electrical transport. The electrical properties of the Ni/MWCNT/a-CNT and the Ag/a-CNT heterojunctions have been measured. As a result, it is found that the contacts between the Ag nanowires and the a-CNTs are ohmic ones with universal significance, and that each Ni/MWCNT/ a-CNT contains two diodes connected in series face-to-face. Moreover, most of the diodes have the most nearly ideal characteristics of Schottky contacts, indicated by quantitative analysis with the thermionic emission theory. Last, our group has developed a novel technique for rapidly producing large-area highly-oriented Si nanowire arrays on Si wafers by scratching the Si surface with metal nanoparticles near room temperature in HF solution. By this method, Si nanowires with desirable axial crystallographic directions, desirable doping characteristics and remarkable antireflection property can be readily obtained. The Si nanowire arrays have the potential applicability as an antireflective layer for photovoltaic devices and optical detectors. Furthermore, a combination of this method and the nanosphere lithography has been developed to fabricate large-scale Si and Si1−xGex quantum dot arrays with controllable height, diameter and center-to-center distance.

scholarly journals DRIE Si Nanowire Arrays Supported Nano-Carbon Film for Deriving High Specific Energy Supercapacitors On-Chip

2021 ◽  
Vol 1837 (1) ◽  
pp. 012005
Author(s):  
Pai Lu ◽  
Xuyuan Chen ◽  
Per Ohlckers ◽  
Einar Halvorsen ◽  
Martin Hoffmann ◽  
...  
Keyword(s):  
Specific Energy ◽  
Carbon Film ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Nano Carbon ◽  
High Specific Energy ◽  
On Chip

Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Electrical Properties ◽  
Chemical Modification ◽  
Nanowire Array ◽  
Noise Measurement ◽  
Nanowire Arrays ◽  
Interface Traps ◽  
Si Nanowire ◽  
Si Nanowire Array

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

Freestanding nanowire arrays from soft-etch block copolymer templates

Soft Matter ◽  
2007 ◽  
Vol 3 (1) ◽  
pp. 94-98 ◽  
Author(s):  
Edward J. W. Crossland ◽  
Sabine Ludwigs ◽  
Marc A. Hillmyer ◽  
Ullrich Steiner
Keyword(s):  
Block Copolymer ◽  
Nanowire Arrays

Large Scale Monodisperse Hexagonal Arrays of Superparamagnetic Iron Oxides Nanodots: A Facile Block Copolymer Inclusion Method

2012 ◽  
Vol 24 (18) ◽  
pp. 2390-2397 ◽  
Author(s):  
Tandra Ghoshal ◽  
Tuhin Maity ◽  
Jeffrey F. Godsell ◽  
Saibal Roy ◽  
Michael A. Morris
Keyword(s):  
Block Copolymer ◽  
Iron Oxides ◽  
Large Scale ◽  
Superparamagnetic Iron Oxides ◽  
Inclusion Method ◽  
Hexagonal Arrays

Control of Crystal Orientation of Epitaxial Si nanowires on Si Substrate Using AAO template

2011 ◽  
Vol 1350 ◽  
Author(s):  
Tomohiro Shimizu ◽  
Qi Wang ◽  
Chonge Wang ◽  
Fumihiro Inoue ◽  
Makoto Koto ◽  
...  
Keyword(s):  
Crystal Orientation ◽  
Growth Direction ◽  
Nanowire Arrays ◽  
Si Nanowires ◽  
Aao Template ◽  
Si Substrate ◽  
Anodic Aluminum ◽  
Transmission Electron ◽  
Growth Method ◽  
Vls Growth

ABSTRACTControl of crystal orientation of vertically grown epitaxial Si (111) and (110) nanowire arrays on Si substrate has been demonstrated using a combination of an anodic aluminum oxide (AAO) template and vapor – liquid – solid (VLS) growth method. The crystal orientation of the nanowire was investigated by transmission electron microscopy. A growth direction of the nanowire arrays was guided perpendicular to the surface of the substrate by the AAO template, and the crystal orientation of the nanowire arrays was selected using the single crystal Si substrate properly cut in desired orientation.

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