Fabrication of ultra-dense sub-10 nm in-plane Si nanowire arrays by using a novel block copolymer method: optical properties

Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 2177-2187 ◽  
Author(s):  
Tandra Ghoshal ◽  
Christos Ntaras ◽  
John O'Connell ◽  
Matthew T. Shaw ◽  
Justin D. Holmes ◽  
...  
Keyword(s):  
Optical Properties ◽  
Block Copolymer ◽  
Nanowire Arrays ◽  
Si Nanowire

Size effect on morphology and optical properties of branched ZnO/Si nanowire arrays

2016 ◽  
Vol 380 (9-10) ◽  
pp. 1044-1048 ◽  
Author(s):  
Qianqian Yang ◽  
Dingguo Li ◽  
Binbin Yu ◽  
Shengli Huang ◽  
Jiayuan Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Size Effect ◽  
Nanowire Arrays ◽  
Si Nanowire

Aninsituhard mask block copolymer approach for the fabrication of ordered, large scale, horizontally aligned, Si nanowire arrays on Si substrate

2014 ◽  
Author(s):  
Tandra Ghoshal ◽  
Ramsankar Senthamaraikannan ◽  
Matthew T. Shaw ◽  
Justin D. Holmes ◽  
Michael A. Morris
Keyword(s):  
Block Copolymer ◽  
Large Scale ◽  
Nanowire Arrays ◽  
Si Substrate ◽  
Si Nanowire

Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays

CrystEngComm ◽  
2011 ◽  
Vol 13 (7) ◽  
pp. 2439 ◽  
Author(s):  
Luwei Sun ◽  
Haiping He ◽  
Chao Liu ◽  
Yangfan Lu ◽  
Zhizhen Ye
Keyword(s):  
Optical Properties ◽  
Nanowire Arrays ◽  
Zno Nanostructures ◽  
Si Nanowire ◽  
Controllable Growth

Fabrication of Ordered, Large Scale, Horizontally-Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach

2013 ◽  
Vol 26 (8) ◽  
pp. 1207-1216 ◽  
Author(s):  
Tandra Ghoshal ◽  
Ramsankar Senthamaraikannan ◽  
Matthew T. Shaw ◽  
Justin D. Holmes ◽  
Michael A. Morris
Keyword(s):  
Block Copolymer ◽  
Large Scale ◽  
Nanowire Arrays ◽  
Hard Mask ◽  
Si Nanowire

Structure and Optical Properties of ZnO Nanowire Arrays Grown by Plasma-assisted Molecular Beam Epitaxy

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals DRIE Si Nanowire Arrays Supported Nano-Carbon Film for Deriving High Specific Energy Supercapacitors On-Chip

2021 ◽  
Vol 1837 (1) ◽  
pp. 012005
Author(s):  
Pai Lu ◽  
Xuyuan Chen ◽  
Per Ohlckers ◽  
Einar Halvorsen ◽  
Martin Hoffmann ◽  
...  
Keyword(s):  
Specific Energy ◽  
Carbon Film ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Nano Carbon ◽  
High Specific Energy ◽  
On Chip

Structure and Optical Properties of SnS Nanowire Arrays Prepared with Two-Step Method

2012 ◽  
Vol 476-478 ◽  
pp. 1519-1522 ◽  
Author(s):  
You Dao Lin ◽  
Xin Wen ◽  
Lai Sen Wang ◽  
Guang Hui Yue ◽  
Dong Liang Peng
Keyword(s):  
Optical Properties ◽  
Electrochemical Deposition ◽  
Average Diameter ◽  
Nanowire Arrays ◽  
Step Method ◽  
Single Crystalline ◽  
Uv Visible

Abstract. Single crystalline SnS nanowire arrays have been synthesized by sulfurating the Sn nanowire arrays which were prepared with the electrochemical deposition. The obtained SnS nanowire arrays are charactered with the XRD, SEM, TEM and the UV/Visible/NIR spectrophotometer. And the results indicate that the nanowires with an average diameter of 50 nm and a length of several tens micrometers, which same with the as prepared Sn nanowires. There are two absorption peaks indicate with the direct and indirect bandgaps about the orthorhombic SnS nanowire arrays.

Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Electrical Properties ◽  
Chemical Modification ◽  
Nanowire Array ◽  
Noise Measurement ◽  
Nanowire Arrays ◽  
Interface Traps ◽  
Si Nanowire ◽  
Si Nanowire Array

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

Sign in / Sign up

Export Citation Format

Share Document