Radiation effects in the LUPA4000 CMOS image sensor for space applications

2011 ◽  
Author(s):  
Luis Gomez Rojas ◽  
Mark Chang ◽  
Gordon Hopkinson ◽  
Ludovic Duvet
Keyword(s):  
Radiation Effects ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Space Applications

Design and characterization of radiation tolerant CMOS image sensor for space applications

2011 ◽  
Author(s):  
Xinyang Wang ◽  
Jan Bogaerts ◽  
Werner Ogiers ◽  
Gerd Beeckman ◽  
Guy Meynants
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Space Applications ◽  
Radiation Tolerant

Radiation effects on scientific CMOS image sensor

2015 ◽  
Vol 36 (11) ◽  
pp. 114007
Author(s):  
Yuanfu Zhao ◽  
Liyan Liu ◽  
Xiaohui Liu ◽  
Xiaofeng Jin ◽  
Xiang Li
Keyword(s):  
Radiation Effects ◽  
Cmos Image Sensor ◽  
Image Sensor

A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

2008 ◽  
Vol 32 (6) ◽  
pp. 442-445 ◽  
Author(s):  
Meng Xiang-Ti ◽  
Huang Qiang ◽  
Ma Yan-Xiu ◽  
Zheng Yong-Nan ◽  
Fan Ping ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sensor Degradation ◽  
Mev Protons

X-Ray Radiation Effects on CMOS Image Sensor In-Pixel Devices

2010 ◽  
Author(s):  
J. Tan ◽  
B. Buttgen ◽  
A. J. P. Theuwissen
Keyword(s):  
Radiation Effects ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
X Ray

scholarly journals A High Full Well Capacity CMOS Image Sensor for Space Applications

Sensors ◽  
2019 ◽  
Vol 19 (7) ◽  
pp. 1505 ◽  
Author(s):  
Woo-Tae Kim ◽  
Cheonwi Park ◽  
Hyunkeun Lee ◽  
Ilseop Lee ◽  
Byung-Geun Lee
Keyword(s):  
Modulation Transfer Function ◽  
Incident Light ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Damage Effect ◽  
Modulation Transfer ◽  
Incident Light Intensity ◽  
Space Applications ◽  
Mos Capacitor ◽  
Pixel Pitch

This paper presents a high full well capacity (FWC) CMOS image sensor (CIS) for space applications. The proposed pixel design effectively increases the FWC without inducing overflow of photo-generated charge in a limited pixel area. An MOS capacitor is integrated in a pixel and accumulated charges in a photodiode are transferred to the in-pixel capacitor multiple times depending on the maximum incident light intensity. In addition, the modulation transfer function (MTF) and radiation damage effect on the pixel, which are especially important for space applications, are studied and analyzed through fabrication of the CIS. The CIS was fabricated using a 0.11 μm 1-poly 4-metal CIS process to demonstrate the proposed techniques and pixel design. A measured FWC of 103,448 electrons and MTF improvement of 300% are achieved with 6.5 μm pixel pitch.

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size
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