Dry etching for high-resolution maskmaking

1990 ◽  
Author(s):  
Serge V. Tedesco ◽  
Christophe Pierrat ◽  
Jean M. Lamure ◽  
C. Sourd ◽  
Jean-Luc Martin ◽  
...  
Keyword(s):  
High Resolution ◽  
Dry Etching

High resolution spin-on electron beam lithography resist with exceptional dry etching resistance

2015 ◽  
Vol 1 (1) ◽  
pp. 13-19 ◽  
Author(s):  
G. Grenci ◽  
E. Zanchetta ◽  
A. Pozzato ◽  
G. Della Giustina ◽  
G. Brusatin ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Dry Etching

scholarly journals Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)

1999 ◽  
Vol 4 (S1) ◽  
pp. 834-839 ◽  
Author(s):  
H.P. Gillis ◽  
M.B. Christopher ◽  
K.P. Martin ◽  
D.A. Choutov
Keyword(s):  
High Resolution ◽  
Stoichiometric Composition ◽  
Dry Etching ◽  
Wide Bandgap ◽  
Low Energy ◽  
Energy Electron ◽  
Etching Technique ◽  
Device Structures ◽  
Low Energy Electron ◽  
Bandgap Semiconductors

Fabricating device structures from the III-N wide bandgap semiconductors requires anisotropoic dry etching processes that leave smooth surfaces with stoichiometric composition after transferring high-resolution patterns with vertical sidewalls. The purpose of this article is to describe results obtained by a new low-damage dry etching technique that provides an alternative to the standard ion-enhanced dry etching methods in meeting these demands for processing the III-N materials.

High-resolution patterning of thin HTSC films: evaluation of lithography and dry etching

1992 ◽  
Author(s):  
Wolfgang Pilz ◽  
K. Graendorff ◽  
Joachim Janes ◽  
Heinz-Peter Stoll ◽  
C. Copetti ◽  
...  
Keyword(s):  
High Resolution ◽  
Dry Etching

High resolution patterning of PbS quantum dots/graphene photodetectors with high responsivity via photolithography with a top graphene layer to protect surface ligands

2021 ◽  
Author(s):  
Seungbae Ahn ◽  
Wenjun Chen ◽  
Oscar Vazquez-Mena
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
Graphene Layer ◽  
Dry Etching ◽  
Surface Ligands ◽  
High Responsivity ◽  
Lithography Process ◽  
Pbs Quantum Dots

We use a top-graphene layer to protect QD surface ligands during the lithography process, allowing reliable patterning of hybrid Gr/QD photodetectors via lithography and dry etching.

Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)

1998 ◽  
Vol 537 ◽  
Author(s):  
H.P. Gillis ◽  
M.B. Christopher ◽  
K.P. Martin ◽  
D.A. Choutov
Keyword(s):  
High Resolution ◽  
Stoichiometric Composition ◽  
Dry Etching ◽  
Low Energy ◽  
Energy Electron ◽  
Smooth Surfaces ◽  
Etching Technique ◽  
Device Structures ◽  
Low Energy Electron

AbstractFabricating device structures from the III-N wide ba-ndgap semiconductors requires anisotropoic dry etching processes that leave smooth surfaces with stoichiometric composition after transferring high-resolution patterns with vertical sidewalls. The purpose of this article is to describe results obtained by a new low-damage dry etching technique that provides an alternative to the standard ion-enhanced dry etching methods in meeting these demands for processing the HI-N materials.

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