scholarly journals Single crystal diamond blazed diffraction gratings and Fresnel microlens arrays with improved optical performance by high-resolution 3D laser lithography and pattern transfer by dry etching

OSA Continuum ◽  
2019 ◽  
Vol 2 (12) ◽  
pp. 3374 ◽  
Author(s):  
Adrien Toros ◽  
Nathanaël Restori ◽  
Marcell Kiss ◽  
Toralf Scharf ◽  
Niels Quack
2004 ◽  
Vol 84 (15) ◽  
pp. 2754-2756 ◽  
Author(s):  
E. Gu ◽  
H. W. Choi ◽  
C. Liu ◽  
C. Griffin ◽  
J. M. Girkin ◽  
...  

Author(s):  
Marcell Kiss ◽  
Teodoro Graziosi ◽  
Adrien Toros ◽  
Toralf Scharf ◽  
Olivier J.F. Martin ◽  
...  

2019 ◽  
Vol 27 (21) ◽  
pp. 30371 ◽  
Author(s):  
Marcell Kiss ◽  
Teodoro Graziosi ◽  
Adrien Toros ◽  
Toralf Scharf ◽  
Christian Santschi ◽  
...  

2012 ◽  
Vol 209 (9) ◽  
pp. 1786-1791 ◽  
Author(s):  
Guangliang Yang ◽  
Ken Livingston ◽  
Richard Jones ◽  
Franz Klein

Author(s):  
Akira Tanaka ◽  
David F. Harling

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.


Author(s):  
M. Awaji

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.


2007 ◽  
Vol 2007 (suppl_26) ◽  
pp. 455-460 ◽  
Author(s):  
G. Renaudin ◽  
E. Mapemba ◽  
M. El-Ghozzi ◽  
M. Dubois ◽  
D. Avignant ◽  
...  

2021 ◽  
Vol 1 (1) ◽  
pp. 143-149
Author(s):  
Wei Cao ◽  
Deng Gao ◽  
Hongyang Zhao ◽  
Zhibin Ma

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