Research of capacitor transimpedance amplifier for infrared readout integrated circuit design with variable integration time

2013 ◽  
Author(s):  
Tai-Ping Sun ◽  
Yi-Chuan Lu ◽  
Hsiu-Li Shieh ◽  
Ming-Sheng Yang ◽  
Tse-Hsin Chen ◽  
...  
Keyword(s):  
Circuit Design ◽  
Integrated Circuit ◽  
Integration Time ◽  
Transimpedance Amplifier ◽  
Integrated Circuit Design ◽  
Readout Integrated Circuit ◽  
Variable Integration

Model-Based Low-Noise Readout Integrated Circuit Design for Uncooled Microbolometers

2013 ◽  
Vol 13 (4) ◽  
pp. 1207-1215 ◽  
Author(s):  
Jian Lv ◽  
Hui Zhong ◽  
Yun Zhou ◽  
BaoBin Liao ◽  
Jun Wang ◽  
...  
Keyword(s):  
Circuit Design ◽  
Integrated Circuit ◽  
Low Noise ◽  
Integrated Circuit Design ◽  
Readout Integrated Circuit ◽  
Model Based

A Case Study of Defects Due to Process-Design Interaction in Nano Scale Technology

2007 ◽  
Author(s):  
Hung-Sung Lin ◽  
Ying-Chin Hou ◽  
Juimei Fu ◽  
Mong-Sheng Wu ◽  
Vincent Huang ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Circuit Design ◽  
Process Design ◽  
Integrated Circuit ◽  
Photon Emission ◽  
Integrated Circuit Design ◽  
Nano Scale ◽  
Leakage Path ◽  
Related Defect

Abstract The difficulties in identifying the precise defect location and real leakage path is increasing as the integrated circuit design and process have become more and more complicated in nano scale technology node. Most of the defects causing chip leakage are detectable with only one of the FA (Failure Analysis) tools such as LCD (Liquid Crystal Detection) or PEM (Photon Emission Microscope). However, due to marginality of process-design interaction some defects are often not detectable with only one FA tool [1][2]. This paper present an example of an abnormal power consumption process-design interaction related defect which could only be detected with more advanced FA tools.

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