Development of a chemically amplified positive resist material for single-layer deep-UV lithography

Author(s):  
Omkaram Nalamasu ◽  
May Cheng ◽  
Janet M. Kometani ◽  
Sheila Vaidya ◽  
Elsa Reichmanis ◽  
...  
1996 ◽  
Author(s):  
Yasunobu Onishi ◽  
Kazuo Sato ◽  
Kenzi Chiba ◽  
Masafumi Asano ◽  
Hirokazu Niki ◽  
...  

1989 ◽  
Vol 29 (13) ◽  
pp. 856-858 ◽  
Author(s):  
Tsuguo Yamaoka ◽  
Masashi Nishiki ◽  
Ken'Ichi Koseki ◽  
Mitsunobu Koshiba

1988 ◽  
Vol 1 (1) ◽  
pp. 102-103 ◽  
Author(s):  
Masashi Nishiki ◽  
Tsuguo Yamaoka ◽  
Ken'ichi Koseki ◽  
Mitsunobu Koshiba

1989 ◽  
Vol 29 (13) ◽  
pp. 850-855 ◽  
Author(s):  
R. G. Tarascon ◽  
E. Reichmanis ◽  
F. M. Houlihan ◽  
A. Shugard ◽  
L. F. Thompson

2002 ◽  
Vol 15 (3) ◽  
pp. 367-370 ◽  
Author(s):  
Kazuyuki SUGITA ◽  
Masahiro YAMASHITA ◽  
Kieko HARADA ◽  
Masahito KUSHIDA ◽  
Kyoichi SAITO

1993 ◽  
Vol 324 ◽  
Author(s):  
Wu-Song Iiuang ◽  
Ranee Kwong ◽  
Ahmad Katnani ◽  
Maitoud Khojasteh ◽  
Kim Y. Lee

AbstractIt is known that one of the main shortcomings of chemically amplified resist systems is their sensitivity to airborne base contaminants. The contaminants cause unpredictable linewidth variations deeming the resist incompatible with manufacturing. Besides other issues, this drawback has greatly contributed to the slow introduction of DUV into manufacturing and discouragcd most semiconductor manufactures from including DUV in their strategic plans. In this paper, we present a new positive tone chemically amplified photoresist system which is resilient to airborne base contaminants and it shows stable linewidth for more than 24 hours delay between exposure and development. This resist has high sensitivity (17-18 mj/cm2), high contrast (7), high resolution (0.35 um with λ = 248 rm and NA = 0.37) and large process latitude in deep-UV lithography. This resist also exhibits high resolution (0.1 um in 0.35 um thick resist) in E-beam lithography at a sensitivity of about 10 uC/cm2. Both lithographic systems (deep-UV and E-beam) yield nearly vertical profiles in the resist images.


2004 ◽  
Vol 17 (3) ◽  
pp. 373-378
Author(s):  
Kazuyuki Sugita ◽  
Hiroshi Miyata ◽  
Kieko Harada ◽  
Masahito Kushida ◽  
Kyoichi Saito

1993 ◽  
Author(s):  
Omkaram Nalamasu ◽  
Allen G. Timko ◽  
May Cheng ◽  
Janet M. Kometani ◽  
Mary E. Galvin-Donoghue ◽  
...  

2021 ◽  
Vol 3 (8) ◽  
pp. 2236-2244
Author(s):  
Matthias Keil ◽  
Alexandre Emmanuel Wetzel ◽  
Kaiyu Wu ◽  
Elena Khomtchenko ◽  
Jitka Urbankova ◽  
...  

A novel super resolution deep UV lithography method is employed to fabricate large area plasmonic metasurfaces.


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