Poly(t-BOC-styrene sulfone)-based chemically amplified resists for deep-UV lithography

1989 ◽  
Vol 29 (13) ◽  
pp. 850-855 ◽  
Author(s):  
R. G. Tarascon ◽  
E. Reichmanis ◽  
F. M. Houlihan ◽  
A. Shugard ◽  
L. F. Thompson
Keyword(s):  
Uv Lithography ◽  
Chemically Amplified ◽  
Deep Uv ◽  
Chemically Amplified Resists

Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist

1996 ◽  
Author(s):  
Yasunobu Onishi ◽  
Kazuo Sato ◽  
Kenzi Chiba ◽  
Masafumi Asano ◽  
Hirokazu Niki ◽  
...  
Keyword(s):  
Uv Lithography ◽  
Chemically Amplified ◽  
Deep Uv ◽  
Positive Resist

Application of photodecomposable base concept to two-component deep-UV chemically amplified resists

1996 ◽  
Author(s):  
Satoru Funato ◽  
N. Kawasaki ◽  
Yoshiaki Kinoshita ◽  
Seiya Masuda ◽  
Hiroshi Okazaki ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Base Concept ◽  
Two Component ◽  
Deep Uv ◽  
Chemically Amplified Resists

A New Environmentally Stable Posyitve Tone Chemically Amplified Resist System - KRS

1993 ◽  
Vol 324 ◽  
Author(s):  
Wu-Song Iiuang ◽  
Ranee Kwong ◽  
Ahmad Katnani ◽  
Maitoud Khojasteh ◽  
Kim Y. Lee
Keyword(s):  
High Resolution ◽  
High Sensitivity ◽  
Vertical Profiles ◽  
High Contrast ◽  
Uv Lithography ◽  
Chemically Amplified ◽  
Strategic Plans ◽  
Chemically Amplified Resist ◽  
Deep Uv ◽  
Chemically Amplified Photoresist

AbstractIt is known that one of the main shortcomings of chemically amplified resist systems is their sensitivity to airborne base contaminants. The contaminants cause unpredictable linewidth variations deeming the resist incompatible with manufacturing. Besides other issues, this drawback has greatly contributed to the slow introduction of DUV into manufacturing and discouragcd most semiconductor manufactures from including DUV in their strategic plans. In this paper, we present a new positive tone chemically amplified photoresist system which is resilient to airborne base contaminants and it shows stable linewidth for more than 24 hours delay between exposure and development. This resist has high sensitivity (17-18 mj/cm2), high contrast (7), high resolution (0.35 um with λ = 248 rm and NA = 0.37) and large process latitude in deep-UV lithography. This resist also exhibits high resolution (0.1 um in 0.35 um thick resist) in E-beam lithography at a sensitivity of about 10 uC/cm2. Both lithographic systems (deep-UV and E-beam) yield nearly vertical profiles in the resist images.

Development of a chemically amplified positive resist material for single-layer deep-UV lithography

1990 ◽  
Author(s):  
Omkaram Nalamasu ◽  
May Cheng ◽  
Janet M. Kometani ◽  
Sheila Vaidya ◽  
Elsa Reichmanis ◽  
...  
Keyword(s):  
Single Layer ◽  
Uv Lithography ◽  
Chemically Amplified ◽  
Deep Uv ◽  
Positive Resist

Positive chemically amplified resist for deep-UV lithography

1993 ◽  
Author(s):  
Omkaram Nalamasu ◽  
Allen G. Timko ◽  
May Cheng ◽  
Janet M. Kometani ◽  
Mary E. Galvin-Donoghue ◽  
...  
Keyword(s):  
Uv Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Deep Uv

Heating effect of the radiation chemistry of polyhydroxystyrene-type chemically amplified resists

2020 ◽  
Vol 59 (8) ◽  
pp. 086506
Author(s):  
Yuta Ikari ◽  
Kazumasa Okamoto ◽  
Akihiro Konda ◽  
Takahiro Kozawa ◽  
Takao Tamura
Keyword(s):  
Radiation Chemistry ◽  
Heating Effect ◽  
Chemically Amplified ◽  
Chemically Amplified Resists

scholarly journals Large plasmonic color metasurfaces fabricated by super resolution deep UV lithography

2021 ◽  
Vol 3 (8) ◽  
pp. 2236-2244
Author(s):  
Matthias Keil ◽  
Alexandre Emmanuel Wetzel ◽  
Kaiyu Wu ◽  
Elena Khomtchenko ◽  
Jitka Urbankova ◽  
...  
Keyword(s):  
Super Resolution ◽  
Large Area ◽  
Uv Lithography ◽  
Deep Uv

A novel super resolution deep UV lithography method is employed to fabricate large area plasmonic metasurfaces.

Characterizing acid diffusion lengths in chemically amplified resists from measurements of deprotection kinetics

2014 ◽  
Vol 13 (4) ◽  
pp. 043017 ◽  
Author(s):  
Abhijit A. Patil ◽  
Yogendra Narayan Pandey ◽  
Manolis Doxastakis ◽  
Gila E. Stein
Keyword(s):  
Acid Diffusion ◽  
Chemically Amplified ◽  
Chemically Amplified Resists

Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists

2006 ◽  
Vol 45 (No. 46) ◽  
pp. L1230-L1231
Author(s):  
Katsumi Maeda ◽  
Kaichiro Nakano ◽  
Masamitsu Shirai
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resists
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