X-ray photoelectron spectroscopy depth profiling of oxidized aluminum thin films

1994 ◽  
Author(s):  
Jongmin Kim ◽  
Jeffrey J. Weimer ◽  
Muamer Zukic ◽  
Charles E. Keffer ◽  
Douglas G. Torr
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
X Ray ◽  
Title X

X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling

2010 ◽  
Vol 28 (2) ◽  
pp. L1-L4 ◽  
Author(s):  
T. Miyayama ◽  
N. Sanada ◽  
M. Suzuki ◽  
J. S. Hammond ◽  
S.-Q. D. Si ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Spectroscopy Study ◽  
X Ray ◽  
Cluster Ion

scholarly journals Determination of Lithium-Ion Distributions in Nanostructured Block Polymer Electrolyte Thin Films by X-ray Photoelectron Spectroscopy Depth Profiling

ACS Nano ◽  
2014 ◽  
Vol 9 (1) ◽  
pp. 512-520 ◽  
Author(s):  
Jonathan B. Gilbert ◽  
Ming Luo ◽  
Cameron K. Shelton ◽  
Michael F. Rubner ◽  
Robert E. Cohen ◽  
...  
Keyword(s):  
Thin Films ◽  
Polymer Electrolyte ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Lithium Ion ◽  
Block Polymer ◽  
X Ray ◽  
Ion Distributions

Depth profiling of dielectric SrTiO3 thin films by angle-resolved x-ray photoelectron spectroscopy

2006 ◽  
Vol 89 (25) ◽  
pp. 254103 ◽  
Author(s):  
S. Bhaskar ◽  
Dan Allgeyer ◽  
John A. Smythe
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
X Ray

scholarly journals X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 239
Author(s):  
Monzer Maarouf ◽  
Muhammad Baseer Haider ◽  
Qasem Ahmed Drmosh ◽  
Mogtaba B. Mekki
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Depth Profiling ◽  
Fused Silica ◽  
X Ray ◽  
Chemisorbed Oxygen ◽  
Different Temperatures ◽  
Hall Effect Measurements

Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.

X-ray Photoelectron Spectroscopy Depth Profiling of La2O3/Si Thin Films Deposited by Reactive Magnetron Sputtering

2011 ◽  
Vol 3 (11) ◽  
pp. 4370-4373 ◽  
Author(s):  
C. V. Ramana ◽  
R. S. Vemuri ◽  
V. V. Kaichev ◽  
V. A. Kochubey ◽  
A. A. Saraev ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray

Low-Temperature Deposition of ZrC thin films from a Single-Source Precursor

1992 ◽  
Vol 282 ◽  
Author(s):  
David C. Smith ◽  
Rodrigo R. Rubiano ◽  
Matthew D. Healy ◽  
Robert W. Springer
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Zirconium Carbide ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Organometallic Precursor ◽  
Single Source Precursor

ABSTRACTStable zirconium carbide thin films have been deposited from a singlesource organometallic precursor, tetraneopentyl zirconium, at substrate temperatures above 500 °C. Materials deposited above this temperature are crystalline by X-ray diffraction. A metal to carbon ratioof 1:2 is observed by Auger electron spectroscopy depth profiling. X-ray photoelectron spectroscopy indicates the zirconium is single phase. The observed spectra correspond well to spectra for zirconium carbide standards. Carbon XPS reveals carbidic and graphitic or hydrocarbon species with a third unknown carbon species. Elastic recoil detection finds a large, up to 16%, hydrogen content in the thin film.

Phase configuration, nanostructure, and mechanical behaviors in Ti-B-C-N thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2520-2527 ◽  
Author(s):  
Yonghao Lu ◽  
Junping Wang ◽  
Yaogen Shen ◽  
Dongbai Sun
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Solid Solution Hardening ◽  
Mechanical Behaviors ◽  
Additional Increase ◽  
N Content ◽  
X Ray ◽  
Nanocomposite Thin Films ◽  
The Cost ◽  
Nano Grains

A series of Ti-B-C-N thin films were deposited on Si (100) at 500 °C by incorporation of different amounts of N into Ti-B-C using reactive unbalanced dc magnetron sputtering in an Ar-N2 gas mixture. The effect of N content on phase configuration, nanostructure evolution, and mechanical behaviors was studied by x-ray diffraction, x-ray photoelectron spectroscopy, Raman spectroscopy, high-resolution transmission electron microscopy, and microindentation. It was found that the pure Ti-B-C was two-phased quasi-amorphous thin films comprising TiCx and TiB2. Incorporation of a small amount of N not only dissolved into TiCx but also promoted growth of TiCx nano-grains. As a result, nanocomposite thin films of nanocrystalline (nc-) TiCx(Ny) (x + y < 1) embedded into amorphous (a-) TiB2 were observed until nitrogen fully filled all carbon vacancy lattice (at that time x + y = 1). Additional increase of N content promoted formation of a-BN at the cost of TiB2, which produced nanocomposite thin films of nc-Ti(Cx,N1-x) embedded into a-(TiB2, BN). Formation of BN also decreased nanocrystalline size. Both microhardness and elastic modulus values were increased with an increase of N content and got their maximums at nanocomposite thin films consisting of nc-Ti(Cx,N1-x) and a-TiB2. Both values were decreased after formation of BN. Residual compressive stress value was successively decreased with an increase of N content. Enhancement of hardness was attributed to formation of nanocomposite structure and solid solution hardening.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

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