scholarly journals Determination of Lithium-Ion Distributions in Nanostructured Block Polymer Electrolyte Thin Films by X-ray Photoelectron Spectroscopy Depth Profiling

ACS Nano ◽  
2014 ◽  
Vol 9 (1) ◽  
pp. 512-520 ◽  
Author(s):  
Jonathan B. Gilbert ◽  
Ming Luo ◽  
Cameron K. Shelton ◽  
Michael F. Rubner ◽  
Robert E. Cohen ◽  
...  
1991 ◽  
Vol 35 (A) ◽  
pp. 143-150 ◽  
Author(s):  
T. C. Huang

AbstractGrazing-incidence X-ray analysis techniques which are commonly used for the nondestructive characterization of surfaces and thin films are reviewed. The X-ray reflectivity technicue is used to study surface uniformity and oxidation, layer thickness and density, interface roughness and diffusion, etc. The grazing-incidence in-plane diffraction technique is used to determine in-plane crystallography of epitaxial films. The grazing-incidence asymmetric-Bragg diffraction is used for surface phase identification and structural depth profiling determination of polycrystalline films. Typical examples to illustrate the types of information that can be obtained by the techniques are presented.


2010 ◽  
Vol 28 (2) ◽  
pp. L1-L4 ◽  
Author(s):  
T. Miyayama ◽  
N. Sanada ◽  
M. Suzuki ◽  
J. S. Hammond ◽  
S.-Q. D. Si ◽  
...  

2006 ◽  
Vol 89 (25) ◽  
pp. 254103 ◽  
Author(s):  
S. Bhaskar ◽  
Dan Allgeyer ◽  
John A. Smythe

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 239
Author(s):  
Monzer Maarouf ◽  
Muhammad Baseer Haider ◽  
Qasem Ahmed Drmosh ◽  
Mogtaba B. Mekki

Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.


Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1206
Author(s):  
Pavel Fedorov ◽  
Denis Nazarov ◽  
Oleg Medvedev ◽  
Yury Koshtyal ◽  
Aleksander Rumyantsev ◽  
...  

The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicated to the Ta-O thin-film system synthesis by the atomic layer deposition (ALD) which allows to deposit high quality films and coatings with excellent uniformity and conformality. Tantalum (V) ethoxide (Ta(OEt)5) and remote oxygen plasma were used as tantalum-containing reagent and oxidizing co-reagent, respectively. The influence of deposition parameters (reactor and evaporator temperature, pulse and purge times) on the growth rate were studied. The thickness of the films were measured by spectroscopic ellipsometry, scanning electron microscopy and X-ray reflectometry. The temperature range of the ALD window was 250–300 °C, the growth per cycle was about 0.05 nm/cycle. Different morphology of films deposited on silicon and stainless steel was found. According to the X-ray diffraction data, the as-prepared films were amorphous. But the heat treatment study shows crystallization at 800 °C with the formation of the polycrystalline Ta2O5 phase with a rhombic structural type (Pmm2). The results of the X-ray reflectometry show the Ta-O films’ density is 7.98 g/cm3, which is close to the density of crystalline Ta2O5 of the rhombic structure (8.18 g/cm3). The obtained thin films have a low roughness and high uniformity. The chemical composition of the surface and bulk of Ta-O coatings was studied by X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy. Surface of the films contain Ta2O5 and some carbon contamination, but the bulk of the films does not contain carbon and any precursor residues. Cyclic voltammetry (CVA) showed that there is no current increase for tantalum (V) oxide in a potential window of 3–4.2 V and has prospects of use as protective coatings for cathode materials of SSLIBs.


2011 ◽  
Vol 3 (11) ◽  
pp. 4370-4373 ◽  
Author(s):  
C. V. Ramana ◽  
R. S. Vemuri ◽  
V. V. Kaichev ◽  
V. A. Kochubey ◽  
A. A. Saraev ◽  
...  

1992 ◽  
Vol 282 ◽  
Author(s):  
David C. Smith ◽  
Rodrigo R. Rubiano ◽  
Matthew D. Healy ◽  
Robert W. Springer

ABSTRACTStable zirconium carbide thin films have been deposited from a singlesource organometallic precursor, tetraneopentyl zirconium, at substrate temperatures above 500 °C. Materials deposited above this temperature are crystalline by X-ray diffraction. A metal to carbon ratioof 1:2 is observed by Auger electron spectroscopy depth profiling. X-ray photoelectron spectroscopy indicates the zirconium is single phase. The observed spectra correspond well to spectra for zirconium carbide standards. Carbon XPS reveals carbidic and graphitic or hydrocarbon species with a third unknown carbon species. Elastic recoil detection finds a large, up to 16%, hydrogen content in the thin film.


1994 ◽  
Author(s):  
Jongmin Kim ◽  
Jeffrey J. Weimer ◽  
Muamer Zukic ◽  
Charles E. Keffer ◽  
Douglas G. Torr

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