Excimer laser technology for soft x-ray generation

1994 ◽  
Author(s):  
Michael F. Powers ◽  
Harry Shields
Keyword(s):  
1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.


1988 ◽  
Vol 42 (1) ◽  
pp. 56-62_1
Author(s):  
Kazufumi Ogawa ◽  
Hideharu Tamura
Keyword(s):  
Lb Films ◽  

1990 ◽  
Author(s):  
Hakaru Mizoguchi ◽  
Akira Endo ◽  
Jayden N. Jethwa ◽  
Fritz P. Schaefer

Author(s):  
ZHAO ZHANG ◽  
JIANING LI ◽  
ZHIYUN YE ◽  
CAINIAN JING ◽  
MENG WANG ◽  
...  

In this paper, the high-temperature oxidation resistant coating on the TA15 titanium alloy by laser cladding (LC) of the KF110-B4C-Ag mixed powders was analyzed in detail. The scanning electron microscope (SEM) and energy dispersive X-ray spectrometer (EDS) images indicated that a good metallurgy bond between the fabricated coating/TA15 was formed; also the fine/compact microstructure was produced after a cladding process. The oxidation mass gain of TA15 was higher than that of the coating after LC process, which were 3.72 and 0.91[Formula: see text]mg[Formula: see text]cm[Formula: see text], respectively, at 60[Formula: see text]h, greatly enhancing the high temperature oxidation resistance.


2004 ◽  
Author(s):  
Jingqiu Liang ◽  
Zichun Le ◽  
Weibiao Wang ◽  
Liangqiang Peng ◽  
Weihua Lan ◽  
...  

1993 ◽  
Vol 63 (22) ◽  
pp. 3046-3048 ◽  
Author(s):  
I. C. E. Turcu ◽  
I. N. Ross ◽  
G. J. Tallents

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