The masks fabricated by UV LIGA for excimer laser ablation and x-ray lithography

2004 ◽  
Author(s):  
Jingqiu Liang ◽  
Zichun Le ◽  
Weibiao Wang ◽  
Liangqiang Peng ◽  
Weihua Lan ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
X Ray ◽  
Excimer Laser Ablation

Effects of Processing Parameters on KrF Excimer Laser Ablation Deposited ZrO2 Films

1991 ◽  
Vol 236 ◽  
Author(s):  
Gary A. Smith ◽  
Li-Chyong Chen ◽  
Mei-Chen Chuang
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Excimer Laser ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Pressure Dependence ◽  
Laser Fluence ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser

AbstractSystematic experiments have been carried out to characterize the yttria containing zirconia thin films on sapphire substrates by 248nm KrF excimer laser ablation. The deposition rate as a function of laser fluence and O2 pressure at room temperature was measured with a quartz crystal microbalance. The results show different threshold fluences for deposition in vacuum vs. oxygen. While the deposition rate increases with increasing fluence at a given oxygen pressure, the rate eventually saturates at a higher laser fluence. At a given fluence, the oxygen pressure dependence of the deposition rate shows a radical reduction when the O2 pressure increases from 10 mTorr to 1 Torr. Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy were used to obtain stoichiometric information. A very strong pressure dependence of the O/Zr ratio was observed. While the trend of increasing O/Zr and Zr/Y ratio with increasing O2 pressure is apparent, the correlations between O/Zr as well as Zr/Y ratio and other processing conditions are less obvious. RBS results indicate an increasing roughness at the interface between the ZrO2 film and the sapphire substrate as the oxygen pressure exceeds 50 mTorr. The structural information obtained from x-ray diffraction patterns indicates broadening of peak width with increasing laser fluence as well as decreasing substrate temperature. For the film deposited at a lower substrate temperature, a strong (002) texture was observed.

Effects of Processing Parameters on KrF Excimer Laser Ablation Deposited ZrO2 Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Gary A. Smith ◽  
Li-Chyong Chen ◽  
Mei-Chen Chuang
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Excimer Laser ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Pressure Dependence ◽  
Laser Fluence ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser

ABSTRACTSystematic experiments have been carried out to characterize the yttria containing zirconia thin films on sapphire substrates by 248nm KrF excimer laser ablation. The deposition rate as a function of laser fluence and O2 pressure at room temperature was measured with a quartz crystal microbalance. The results show different threshold fluences for deposition in vacuum vs. oxygen. While the deposition rate increases with increasing fluence at a given oxygen pressure, the rate eventually saturates at a higher laser fluence. At a given fluence, the oxygen pressure dependence of the deposition rate shows a radical reduction when the O2 pressure increases from 10 mTorr to 1 Torr. Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy were used to obtain stoichiometric information. A very strong pressure dependence of the O/Zr ratio was observed. While the trend of increasing O/Zr and Zr/Y ratio with increasing O2 pressure is apparent, the correlations between O/Zr as well as Zr/Y ratio and other processing conditions are less obvious. RBS results indicate an increasing roughness at the interface between the ZrO2 film and the sapphire substrate as the oxygen pressure exceeds 50 mTorr. The structural information obtained from x-ray diffraction patterns indicates broadening of peak width with increasing laser fluence as well as decreasing substrate temperature. For the film deposited at a lower substrate temperature, a strong (002) texture was observed.

Photoacoustic injury and bone healing following 193nm excimer laser ablation

1992 ◽  
Vol 12 (4) ◽  
pp. 390-396 ◽  
Author(s):  
Joshua Lustmann ◽  
Mario Ulmansky ◽  
Amihay Fuxbrunner ◽  
Aaron Lewis
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Bone Healing ◽  
Excimer Laser Ablation

Excimer-laser ablation and micro-patterning of ceramic Si 3 N 4

1997 ◽  
Vol 65 (3) ◽  
pp. 259-261 ◽  
Author(s):  
J. Heitz ◽  
J.D. Pedarnig ◽  
D. Bäuerle ◽  
G. Petzow
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Micro Patterning

scholarly journals Preparation and Properties of Superconducting thin Films by Excimer Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Michael E. Geusic ◽  
Alan F. Stewart ◽  
Larry R. Pederson ◽  
William J. Weber ◽  
Kenneth R. Marken ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Substrate Surface ◽  
Xrd Analysis ◽  
Zero Field ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation

ABSTRACTExcimer laser ablation with an in situ heat treatment was used to prepare high quality superconducting YBa2Cu3O7−x thin films on (100)-SrTiO3 and (100)-LaAlO3 substrates. A pulsed excimer laser (XeCl; 308 nm) was used to ablate a rotating, bulk YBa2Cu3O7−x target at a laser energy density of 2–3 J/cm2. Based on four-probe dc resistance measurements, the films exhibited superconducting transition temperatures (Tc, midpoint) of 88 and 87K with 2K (90–10%) transition widths for SrTiO3 and LaAlO3, respectively. Transport critical current densities (Jc) measured at 77K were 2 × 106 and 1 × 106 A/cm2 in zero field for SrTiO3 and LaAlO3, respectively. X-ray diffraction (XRD) analysis showed the films to be highly oriented, with the c-axis perpendicular to the substrate surface.

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