Deep-UV positive-tone dry-development process using chemically amplified resist and its application to 256 Mbit DRAM

1993 ◽  
Author(s):  
Woo-Sung Han ◽  
Joong-Hyun Lee ◽  
Jung-Chul Park ◽  
Choon-Geun Park ◽  
Hoyoung Kang ◽  
...  
Keyword(s):  
Development Process ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Deep Uv

Development Process for Chemically Amplified Resist by KrF Imaging

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 6884-6887 ◽  
Author(s):  
Kentaro Matsunaga ◽  
Daisuke Kawamura ◽  
Shoji Mimotogi ◽  
Tsukasa Azuma ◽  
Yasunobu Onishi
Keyword(s):  
Development Process ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Comparison of the lithographic characteristics of t-BOC-based chemically amplified resist system under deep-UV and electron-beam exposures

1994 ◽  
Author(s):  
Regine G. Tarascon-Auriol ◽  
Anthony E. Novembre ◽  
Woon W. Tai ◽  
Linus A. Fetter ◽  
Janet M. Kometani ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Deep Uv

A New Environmentally Stable Posyitve Tone Chemically Amplified Resist System - KRS

1993 ◽  
Vol 324 ◽  
Author(s):  
Wu-Song Iiuang ◽  
Ranee Kwong ◽  
Ahmad Katnani ◽  
Maitoud Khojasteh ◽  
Kim Y. Lee
Keyword(s):  
High Resolution ◽  
High Sensitivity ◽  
Vertical Profiles ◽  
High Contrast ◽  
Uv Lithography ◽  
Chemically Amplified ◽  
Strategic Plans ◽  
Chemically Amplified Resist ◽  
Deep Uv ◽  
Chemically Amplified Photoresist

AbstractIt is known that one of the main shortcomings of chemically amplified resist systems is their sensitivity to airborne base contaminants. The contaminants cause unpredictable linewidth variations deeming the resist incompatible with manufacturing. Besides other issues, this drawback has greatly contributed to the slow introduction of DUV into manufacturing and discouragcd most semiconductor manufactures from including DUV in their strategic plans. In this paper, we present a new positive tone chemically amplified photoresist system which is resilient to airborne base contaminants and it shows stable linewidth for more than 24 hours delay between exposure and development. This resist has high sensitivity (17-18 mj/cm2), high contrast (7), high resolution (0.35 um with λ = 248 rm and NA = 0.37) and large process latitude in deep-UV lithography. This resist also exhibits high resolution (0.1 um in 0.35 um thick resist) in E-beam lithography at a sensitivity of about 10 uC/cm2. Both lithographic systems (deep-UV and E-beam) yield nearly vertical profiles in the resist images.

Simulation analysis of deep-UV chemically amplified resist

1991 ◽  
Author(s):  
Takeshi Ohfuji ◽  
Masanobu Soenosawa ◽  
Hiroshi Nozue ◽  
Kunihiko Kasama
Keyword(s):  
Simulation Analysis ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Deep Uv

Positive chemically amplified resist for deep-UV lithography

1993 ◽  
Author(s):  
Omkaram Nalamasu ◽  
Allen G. Timko ◽  
May Cheng ◽  
Janet M. Kometani ◽  
Mary E. Galvin-Donoghue ◽  
...  
Keyword(s):  
Uv Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Deep Uv

Chemically amplified resist technology for i-line applications

1998 ◽  
Author(s):  
Medhat A. Toukhy ◽  
Sanjay Malik ◽  
Andrew J. Blakeney ◽  
Karin R. Schlicht
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist

Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist

1997 ◽  
Author(s):  
Zheng Cui ◽  
R. A. Moody ◽  
Ian M. Loader ◽  
John G. Watson ◽  
Philip D. Prewett
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Postexposure Delay Effect on Linewidth Variation in Base Added Chemically Amplified Resist

2000 ◽  
Vol 147 (10) ◽  
pp. 3833 ◽  
Author(s):  
Chin-Yu Ku ◽  
Jia-Min Shieh ◽  
Tsann-Bim Chiou ◽  
Hwang-Kuen Lin ◽  
Tan Fu Lei
Keyword(s):  
Delay Effect ◽  
Chemically Amplified ◽  
Chemically Amplified Resist
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