scholarly journals Successors of ArF Water-Immersion Lithography: EUV Lithography, Multi-e-beam Maskless Lithography, or Nanoimprint?

2008 ◽  
Vol 7 (4) ◽  
pp. 040101 ◽  
Author(s):  
Burn J. Lin
Keyword(s):  
Water Immersion ◽  
Maskless Lithography ◽  
Immersion Lithography ◽  
Euv Lithography

scholarly journals Basic approaches to simulation of resist mask formation in computational lithography

2020 ◽  
Vol 6 (1) ◽  
pp. 37-45
Author(s):  
Nikita N. Balan ◽  
Vladidmir V. Ivanov ◽  
Alexey V. Kuzovkov ◽  
Evgenia V. Sokolova ◽  
Evgeniy S. Shamin
Keyword(s):  
Model Calibration ◽  
Physical Simulation ◽  
Water Immersion ◽  
Compact Model ◽  
Process Noise ◽  
Variable Threshold ◽  
Immersion Lithography ◽  
Optimum Sampling ◽  
Rms Error ◽  
Basic Approaches

Main currently used resist mask formation models and problems solved have been overviewed. Stages of "full physical simulation" have been briefly analyzed based on physicochemical principles for conventional diazonapthoquinone (DNQ) photoresists and chemically enhanced ones. We have considered the concepts of the main currently used compact models predicting resist mask contours for full-scale product topologies, i.e., VT5 (Variable Threshold 5) and CM1 (Compact Model 1). Computation examples have been provided for full and compact resist mask formation models. Full resist mask formation simulation has allowed us to optimize the lithographic stack for a new process. Optimal thickness ratios have been found for the binary anti-reflecting layers used in water immersion lithography. VT5 compact model calibration has allowed us to solve the problem of optimal calibration structure sampling for maximal coverage of optical image parameters space while employing the minimal number of structures. This problem has been solved using cluster analysis. Clustering has been implemented using the k-means method. The optimum sampling is 300 to 350 structures, the rms error being 1.4 nm which is slightly greater than the process noise for 100 nm structures. The use of SEM contours for VT5 model calibration allows us to reduce the rms error to 1.18 nm for 40 structures.

Hyper NA water immersion lithography

2004 ◽  
Author(s):  
Bruce W. Smith ◽  
Anatoly Bourov ◽  
Jainming Zhou ◽  
Lena Zavyalova ◽  
Neal Lafferty ◽  
...  
Keyword(s):  
Water Immersion ◽  
Immersion Lithography

ITRS lithography roadmap: 2015 challenges

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Mark Neisser ◽  
Stefan Wurm
Keyword(s):  
Self Assembly ◽  
Lower Cost ◽  
Extreme Ultraviolet ◽  
Cost Effective ◽  
High Volume ◽  
Time Frame ◽  
Maskless Lithography ◽  
Euv Lithography ◽  
Improved Performance ◽  
Better Than

AbstractIn the past few years, novel methods of patterning have made considerable progress. In 2011, extreme ultraviolet (EUV) lithography was the front runner to succeed optical lithography. However, although EUV tools for pilot production capability have been installed, its high volume manufacturing (HVM) readiness continues to be gated by productivity and availability improvements taking longer than expected. In the same time frame, alternative and/or complementary technologies to EUV have made progress. Directed self-assembly (DSA) has demonstrated improved defectivity and progress in integration with design and pattern process flows. Nanoimprint improved performance considerably and is pilot production capable for memory products. Maskless lithography has made progress in tool development and could have an α tool ready in the late 2015 or early 2016. But they all have to compete with multiple patterning. Quadruple patterning is already demonstrated and can pattern lines and spaces down to close to 10-nm half pitch. The other techniques have to do something better than quadruple patterning does to be chosen for implementation. DSA and NIL promise a lower cost. EUV promises a simpler and shorter process and the creation of 2-D patterns more easily with much reduced complexity compared to multiple patterning. Maskless lithography promises to make chip personalization easy and to be particularly cost effective for low-volume chip designs. Decision dates for all of the technologies are this year or next year.

Changing Technology Requirements of Mask Metrology in Semiconductor Industry

2014 ◽  
Vol 613 ◽  
pp. 81-86
Author(s):  
Klaus-Dieter Roeth ◽  
Mark Wagner ◽  
Frank Laske
Keyword(s):  
Extreme Ultraviolet ◽  
Semiconductor Industry ◽  
Water Immersion ◽  
Optical Resolution ◽  
Optical Lithography ◽  
Semiconductor Technology ◽  
Comprehensive Data ◽  
Euv Lithography ◽  
Technology Nodes ◽  
Open Issues

Upcoming Semiconductor Technology Nodes will still be based on optical lithography by ArF water immersion technology because there are still too many open issues preventing extreme ultraviolet (EUV) lithography from being introduced into production. Several kinds of multi- patterning technology are in use to overcome the optical resolution limitation of 193nm high NA illumination and still to achieve <32nm half-pitch. Mask registration metrology must be adapted to provide useful and comprehensive data on the mask contribution to wafer overlay

scholarly journals Novel Wafer Bevel Treatment for Water Immersion Lithography

2008 ◽  
Vol 21 (5) ◽  
pp. 665-672 ◽  
Author(s):  
Mamoru Terai ◽  
Takeo Ishibashi ◽  
Takuya Hagiwara ◽  
Tetsuro Hanna ◽  
Teruhiko Kumada ◽  
...  
Keyword(s):  
Water Immersion ◽  
Immersion Lithography

scholarly journals Approaching the numerical aperture of water immersion lithography at 193-nm

2004 ◽  
Author(s):  
Bruce W. Smith ◽  
Anatoly Bourov ◽  
Yongfa Fan ◽  
Lena V. Zavyalova ◽  
Neal V. Lafferty ◽  
...  
Keyword(s):  
Water Immersion ◽  
Numerical Aperture ◽  
Immersion Lithography ◽  
193 Nm

Current status of water immersion lithography and prospect of higher index method

2007 ◽  
Author(s):  
Soichi Owa ◽  
Katsushi Nakano ◽  
Hiroyuki Nagasaka ◽  
Hirotaka Kohno ◽  
Yasuhiro Ohmura ◽  
...  
Keyword(s):  
Water Immersion ◽  
Current Status ◽  
Index Method ◽  
Immersion Lithography

45-32-nm node photomask technology with water immersion lithography

2006 ◽  
Author(s):  
Takashi Adachi ◽  
Yuichi Inazuki ◽  
Takanori Sutou ◽  
Yasutaka Morikawa ◽  
Nobuhito Toyama ◽  
...  
Keyword(s):  
Water Immersion ◽  
Immersion Lithography

Improvements of adhesion and hydrophobicity of wafer bevel in water immersion lithography

2008 ◽  
Author(s):  
Takeo Ishibash ◽  
Mamoru Terai ◽  
Takuya Hagiwara ◽  
Teruhiko Kumada ◽  
Tetsuro Hanawa ◽  
...  
Keyword(s):  
Water Immersion ◽  
Immersion Lithography
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