Hyper NA water immersion lithography

2004 ◽  
Author(s):  
Bruce W. Smith ◽  
Anatoly Bourov ◽  
Jainming Zhou ◽  
Lena Zavyalova ◽  
Neal Lafferty ◽  
...  
Keyword(s):  
Water Immersion ◽  
Immersion Lithography

scholarly journals Basic approaches to simulation of resist mask formation in computational lithography

2020 ◽  
Vol 6 (1) ◽  
pp. 37-45
Author(s):  
Nikita N. Balan ◽  
Vladidmir V. Ivanov ◽  
Alexey V. Kuzovkov ◽  
Evgenia V. Sokolova ◽  
Evgeniy S. Shamin
Keyword(s):  
Model Calibration ◽  
Physical Simulation ◽  
Water Immersion ◽  
Compact Model ◽  
Process Noise ◽  
Variable Threshold ◽  
Immersion Lithography ◽  
Optimum Sampling ◽  
Rms Error ◽  
Basic Approaches

Main currently used resist mask formation models and problems solved have been overviewed. Stages of "full physical simulation" have been briefly analyzed based on physicochemical principles for conventional diazonapthoquinone (DNQ) photoresists and chemically enhanced ones. We have considered the concepts of the main currently used compact models predicting resist mask contours for full-scale product topologies, i.e., VT5 (Variable Threshold 5) and CM1 (Compact Model 1). Computation examples have been provided for full and compact resist mask formation models. Full resist mask formation simulation has allowed us to optimize the lithographic stack for a new process. Optimal thickness ratios have been found for the binary anti-reflecting layers used in water immersion lithography. VT5 compact model calibration has allowed us to solve the problem of optimal calibration structure sampling for maximal coverage of optical image parameters space while employing the minimal number of structures. This problem has been solved using cluster analysis. Clustering has been implemented using the k-means method. The optimum sampling is 300 to 350 structures, the rms error being 1.4 nm which is slightly greater than the process noise for 100 nm structures. The use of SEM contours for VT5 model calibration allows us to reduce the rms error to 1.18 nm for 40 structures.

scholarly journals Novel Wafer Bevel Treatment for Water Immersion Lithography

2008 ◽  
Vol 21 (5) ◽  
pp. 665-672 ◽  
Author(s):  
Mamoru Terai ◽  
Takeo Ishibashi ◽  
Takuya Hagiwara ◽  
Tetsuro Hanna ◽  
Teruhiko Kumada ◽  
...  
Keyword(s):  
Water Immersion ◽  
Immersion Lithography

scholarly journals Approaching the numerical aperture of water immersion lithography at 193-nm

2004 ◽  
Author(s):  
Bruce W. Smith ◽  
Anatoly Bourov ◽  
Yongfa Fan ◽  
Lena V. Zavyalova ◽  
Neal V. Lafferty ◽  
...  
Keyword(s):  
Water Immersion ◽  
Numerical Aperture ◽  
Immersion Lithography ◽  
193 Nm

Current status of water immersion lithography and prospect of higher index method

2007 ◽  
Author(s):  
Soichi Owa ◽  
Katsushi Nakano ◽  
Hiroyuki Nagasaka ◽  
Hirotaka Kohno ◽  
Yasuhiro Ohmura ◽  
...  
Keyword(s):  
Water Immersion ◽  
Current Status ◽  
Index Method ◽  
Immersion Lithography

45-32-nm node photomask technology with water immersion lithography

2006 ◽  
Author(s):  
Takashi Adachi ◽  
Yuichi Inazuki ◽  
Takanori Sutou ◽  
Yasutaka Morikawa ◽  
Nobuhito Toyama ◽  
...  
Keyword(s):  
Water Immersion ◽  
Immersion Lithography

Improvements of adhesion and hydrophobicity of wafer bevel in water immersion lithography

2008 ◽  
Author(s):  
Takeo Ishibash ◽  
Mamoru Terai ◽  
Takuya Hagiwara ◽  
Teruhiko Kumada ◽  
Tetsuro Hanawa ◽  
...  
Keyword(s):  
Water Immersion ◽  
Immersion Lithography

Hyper NA water immersion lithography at 193 nm and 248 nm

2004 ◽  
Vol 22 (6) ◽  
pp. 3439 ◽  
Author(s):  
Bruce W. Smith ◽  
Yongfa Fan ◽  
Jianming Zhou ◽  
Anatoly Bourov ◽  
Lena Zavyalova ◽  
...  
Keyword(s):  
Water Immersion ◽  
Immersion Lithography ◽  
193 Nm

Evaluation of functional properties of imaging materials for water immersion lithography

2005 ◽  
Author(s):  
William D. Hinsberg ◽  
J. A. Hoffnagle ◽  
G. M. Wallraff ◽  
C. E. Larson ◽  
F. A. Houle ◽  
...  
Keyword(s):  
Functional Properties ◽  
Water Immersion ◽  
Immersion Lithography
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