scholarly journals Bias-voltage-dependent measurement of apparent barrier height on low-work-function thin film

2020 ◽  
Vol 38 (6) ◽  
pp. 062801
Author(s):  
Katsumi Nagaoka ◽  
Shun-ichiro Ohmi
Keyword(s):  
Thin Film ◽  
Work Function ◽  
Barrier Height ◽  
Bias Voltage ◽  
Dependent Measurement ◽  
Voltage Dependent

Conductance and Capacitance Responses of Metal-Organic-Metal Structure Based Organic Semiconductor Thin Film

2017 ◽  
Vol 268 ◽  
pp. 264-268
Author(s):  
Hoh Hang Tak ◽  
Khairul Anuar Mohamad ◽  
Bablu Kumar Ghosh ◽  
Afishah Alias ◽  
Ismail Saad
Keyword(s):  
Thin Film ◽  
Bias Voltage ◽  
Voltage Dependence ◽  
Series Resistance ◽  
Low Frequency ◽  
Metal Structure ◽  
High Frequencies ◽  
Voltage Dependent ◽  
Metal Organic ◽  
Lcr Meter

In this work we have investigated the frequency and the bias voltage dependence of the electrical responses of organic structures based on poly (triarylamine) (PTAA) thin film using ITO/Organic/Al diode structure. The frequency-dependent and bias voltage-dependent conductance and capacitance were investigated using a precision LCR meter with wide frequency test (10 Hz – 100 kHz) and various bias voltages ranges (0.2 to 5.0 V), respectively. Investigation revealed that conductance was strongly dependent on the frequency and bias voltage-dependent. Conductance was inversely proportional to the capacitance among the frequency. Meanwhile, the capacitance and series resistance were dependent until a certain value at the low frequency region, but the capacitance and series resistance were independent at high frequencies.

Bias voltage dependent structure and morphology evolution of magnetron sputtered YSZ thin film: a basic insight

2019 ◽  
Vol 6 (10) ◽  
pp. 106414 ◽  
Author(s):  
N A Rusli ◽  
R Muhammad ◽  
S K Ghoshal ◽  
H Nur ◽  
N Nayan ◽  
...  
Keyword(s):  
Thin Film ◽  
Bias Voltage ◽  
Morphology Evolution ◽  
Structure And Morphology ◽  
Voltage Dependent ◽  
Ysz Thin Film ◽  
Basic Insight

Analysis of the Bias Dependent Spectral Response of a-SiC:H p-i-n Photodiode

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Louro ◽  
A. Fantoni ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spectral Response ◽  
Surface Recombination ◽  
Electrical Field ◽  
Field Reversal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
And Inversion ◽  
Device Operation

AbstractThe bias voltage dependent spectral response (with and without steady state bias light) and the current voltage dependence has been simulated and compared to experimentally obtained values. Results show that in the heterostructures the bias voltage influences differently the field and the diffusion part of the photocurrent. The interchange between primary and secondary photocurrent (i. e. between generator and load device operation) is explained by the interaction of the field and the diffusion components of the photocurrent. A field reversal that depends on the light bias conditions (wavelength and intensity) explains the photocurrent reversal. The field reversal leads to the collapse of the diode regime (primary photocurrent) launches surface recombination at the p-i and i-n interfaces which is responsible for a double-injection regime (secondary photocurrent). Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response.

Bias-Voltage-Dependent Subcircuit Model for Millimeter-Wave CMOS Circuit

2012 ◽  
Vol E95.C (6) ◽  
pp. 1077-1085 ◽  
Author(s):  
Kosuke KATAYAMA ◽  
Mizuki MOTOYOSHI ◽  
Kyoya TAKANO ◽  
Ryuichi FUJIMOTO ◽  
Minoru FUJISHIMA
Keyword(s):  
Millimeter Wave ◽  
Bias Voltage ◽  
Cmos Circuit ◽  
Voltage Dependent

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Work function modulation inMgO/Nb:SrTiO3by utilizing highly nonequilibrium thin-film growth

2014 ◽  
Vol 90 (3) ◽  
Author(s):  
Tomofumi Susaki ◽  
Nobuhiro Shigaki ◽  
Kosuke Matsuzaki ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Work Function ◽  
Film Growth ◽  
Thin Film Growth

In situ work function study of oxidation and thin film growth on clean surfaces

1999 ◽  
Vol 433-435 ◽  
pp. 770-774 ◽  
Author(s):  
I.D Baikie ◽  
U Petermann ◽  
B Lägel
Keyword(s):  
Thin Film ◽  
Work Function ◽  
Film Growth ◽  
Thin Film Growth ◽  
Function Study
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