High-Throughput Screening of Si–Ni Flux for SiC Solution Growth Using a High-Temperature Laser Microscope Observation and Secondary Ion Mass Spectroscopy Depth Profiling

2013 ◽  
Vol 15 (6) ◽  
pp. 287-290 ◽  
Author(s):  
Shingo Maruyama ◽  
Aomi Onuma ◽  
Kazuhisa Kurashige ◽  
Tomohisa Kato ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
High Temperature ◽  
Mass Spectroscopy ◽  
High Throughput ◽  
High Throughput Screening ◽  
Depth Profiling ◽  
Microscope Observation ◽  
Solution Growth ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC

2016 ◽  
Vol 109 (1) ◽  
pp. 011904 ◽  
Author(s):  
Paweł Piotr Michałowski ◽  
Wawrzyniec Kaszub ◽  
Alexandre Merkulov ◽  
Włodek Strupiński
Keyword(s):  
Mass Spectroscopy ◽  
Depth Profiling ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Job ◽  
W. R. Fahrner ◽  
A. I. Ivanov ◽  
L. Palmetshofer ◽  
A. G Ulyashin
Keyword(s):  
High Temperature ◽  
Mass Spectroscopy ◽  
Heat Treatments ◽  
Secondary Ion Mass Spectroscopy ◽  
Spreading Resistance ◽  
Czochralski Silicon ◽  
Implantation Damage ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

AbstractP-type Czochralski (Cz) Si was implanted with H (180 keV, 2.7.1016 cm−2) or He (300 keV, 1.1016 cm−2) ions. The gettering of O and H atoms by the buried implantation damage layers during annealing up to 4 hours (1000°C in H2 or N2 ambient) was studied by secondary ion mass spectroscopy (SIMS) and spreading resistance probe (SRP) measurements. Buried defect layers act as good getter centers for O and H atoms at appropriate heat treatments. The enhanced gettering of O atoms in H implanted Cz Si (as compared to the gettering of O in He implanted samples) as well as the enhanced gettering of O during annealing in H2 flow (as compared to N2 ambient) can be explained by a hydrogen enhanced O diffusion towards the defect layers. According to a strong accumulation of O at the buried damage layers and near the surface some anomalies of the SRP profiles can be observed after post-implantation annealing.

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