Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis

2000 ◽  
Vol 18 (1) ◽  
pp. 489 ◽  
Author(s):  
Charles W. Magee ◽  
Dale Jacobson ◽  
Hans-J. Gossmann
Keyword(s):  
Mass Spectrometry ◽  
Nuclear Reaction ◽  
Secondary Ion Mass Spectrometry ◽  
Nuclear Reaction Analysis ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Ion Implanted

Ion‐implanted selenium profiles in GaAs as measured by secondary ion mass spectrometry

1978 ◽  
Vol 32 (1) ◽  
pp. 15-17 ◽  
Author(s):  
A. Lidow ◽  
J. F. Gibbons ◽  
V. R. Deline ◽  
C. A. Evans
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Ion Implanted

Quantitative Analysis of Microstructures by Secondary Ion Mass Spectrometry

2006 ◽  
Vol 12 (4) ◽  
pp. 352-355 ◽  
Author(s):  
Douglas Phinney
Keyword(s):  
Mass Spectrometry ◽  
Quantitative Analysis ◽  
Trace Element ◽  
Secondary Ion Mass Spectrometry ◽  
Homogeneous Distribution ◽  
Know How ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Ion Implanted

The focus of this review is on trace-element quantitation of microstructures in solids. This review is aimed at the nonspecialist who wants to know how secondary ion mass spectrometry (SIMS) quantitation is achieved. Despite 35 years of SIMS research and applications, SIMS quantitation remains a fundamentally empirical enterprise and is based on standards. The most used standards are “bulk standards”—solids with a homogeneous distribution of a trace element—and ion-implanted solids. The SIMS systematics of bulk standards and ion-implanted solids are reviewed.

SIMS Study of 30keV H+ Ion-Implanted n-GaAs

2011 ◽  
Vol 319-320 ◽  
pp. 181-184
Author(s):  
M. Sivabharathy ◽  
M. Jeyanthinath ◽  
Lasse Vines ◽  
Bengt Gunnar Svensson ◽  
K. Ramachandran
Keyword(s):  
Mass Spectrometry ◽  
Detailed Analysis ◽  
Secondary Ion Mass Spectrometry ◽  
Amorphous Layer ◽  
Thermal Parameters ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
First Time ◽  
Secondary Ion ◽  
Ion Implanted

A detailed analysis on the depth profiles of 30 keV H+ ion implanted n-GaAs for various doses from 1014 to 1017 cm-2 was carried by using Secondary ion mass spectrometry (SIMS), to identify the buried amorphous layer. The results are correlated with Raman and XRD strain parameter studies. Various thermal parameters are computed for the 30 keV H+ ion implanted n-GaAs and SIMS study reported for the first time.

Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

2006 ◽  
Vol 3 (6) ◽  
pp. 1927-1930 ◽  
Author(s):  
R. W. Martin ◽  
D. Rading ◽  
R. Kersting ◽  
E. Tallarek ◽  
E. Nogales ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Depth Profiling ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Ion Implanted
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