Simultaneous depth-profiling of electrical and elemental properties of ion-implanted arsenic in silicon by combining secondary-ion mass spectrometry with resistivity measurements

2016 ◽  
Vol 87 (7) ◽  
pp. 074702
Author(s):  
N. S. Bennett ◽  
C. S. Wong ◽  
P. J. McNally
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Resistivity Measurements ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Ion Implanted

Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

2006 ◽  
Vol 3 (6) ◽  
pp. 1927-1930 ◽  
Author(s):  
R. W. Martin ◽  
D. Rading ◽  
R. Kersting ◽  
E. Tallarek ◽  
E. Nogales ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Depth Profiling ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Ion Implanted

Round-robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling

2017 ◽  
Vol 49 (11) ◽  
pp. 1057-1063 ◽  
Author(s):  
Kyung Joong Kim ◽  
Jong Shik Jang ◽  
Joe Bennett ◽  
David Simons ◽  
Mario Barozzi ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Layer Thickness ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Multilayer Films ◽  
Round Robin ◽  
Round Robin Test ◽  
Ion Mass Spectrometry ◽  
Secondary Ion
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