The determination of amorphous layer thickness in ion implanted silicon using secondary ion mass spectrometry

1986 ◽  
Vol 4 (6) ◽  
pp. 2492-2498 ◽  
Author(s):  
Howard E. Smith ◽  
G. H. Morrison ◽  
D. T. Hodul
2011 ◽  
Vol 319-320 ◽  
pp. 181-184
Author(s):  
M. Sivabharathy ◽  
M. Jeyanthinath ◽  
Lasse Vines ◽  
Bengt Gunnar Svensson ◽  
K. Ramachandran

A detailed analysis on the depth profiles of 30 keV H+ ion implanted n-GaAs for various doses from 1014 to 1017 cm-2 was carried by using Secondary ion mass spectrometry (SIMS), to identify the buried amorphous layer. The results are correlated with Raman and XRD strain parameter studies. Various thermal parameters are computed for the 30 keV H+ ion implanted n-GaAs and SIMS study reported for the first time.


2017 ◽  
Vol 49 (11) ◽  
pp. 1057-1063 ◽  
Author(s):  
Kyung Joong Kim ◽  
Jong Shik Jang ◽  
Joe Bennett ◽  
David Simons ◽  
Mario Barozzi ◽  
...  

1978 ◽  
Vol 32 (1) ◽  
pp. 15-17 ◽  
Author(s):  
A. Lidow ◽  
J. F. Gibbons ◽  
V. R. Deline ◽  
C. A. Evans

1994 ◽  
Vol 80 (12) ◽  
pp. 902-907 ◽  
Author(s):  
Hiroyasu FUJIWARA ◽  
Nobutoshi MURAO ◽  
Eiji ICHISE

Sign in / Sign up

Export Citation Format

Share Document