scholarly journals Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

1999 ◽  
Vol 17 (4) ◽  
pp. 1806 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Wu ◽  
H. Niimi ◽  
V. Misra ◽  
J. C. Phillips
Keyword(s):  
Defect Formation ◽  
Gate Dielectrics ◽  
Dielectric Interfaces

Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics

1999 ◽  
Vol 567 ◽  
Author(s):  
G. Lucovsky ◽  
J.C. Phillips
Keyword(s):  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Chemical Bonding ◽  
Gate Dielectrics ◽  
Nuclear Charge ◽  
Dielectric Materials ◽  
Band Offset ◽  
High K ◽  
Dielectric Interfaces ◽  
Mechanical Bonding

ABSTRACTThis paper discusses chemical bonding effects at Si-dielectric interfaces that are important in the implementation of alternative gate dielectrics including: i) the character of interfacial bonds, either isovalent with bond and nuclear charge balanced as in Si-SiO2, or heterovalent, with an inherent mismatch between bond and nuclear charge, ii) mechanical bonding constraints related to the average number of bonds/atom, Nay, and iii) band offset energies that are reduced in transition metal oxides due to the d-state origins of the conduction band states. Applications are made to specific classes of dielectric materials including i) nitrides and oxide/nitride stacks and ii) alternative high-K gate materials.

Investigation of the Growth and Chemical Stability of Composite Metal Gates on Ultra-thin Gate Dielectrics

1998 ◽  
Vol 532 ◽  
Author(s):  
B. Claflin ◽  
M. Binger ◽  
G. Lucovsky ◽  
H.-Y. Yang
Keyword(s):  
Chemical Stability ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Mos Capacitors ◽  
Metal Gates ◽  
Bulk Film ◽  
Chemical Vapor Deposited ◽  
Capacitance Voltage ◽  
Dielectric Interfaces ◽  
On Line

ABSTRACTThe growth of reactively sputtered TiNx and WNx compound metal films on ultra-thin, remote plasma enhanced chemical vapor deposited SiO2 and SiO2/Si3N4 (ON) stack dielectrics is investigated from initial interface formation to bulk film by interrupted growth and on-line Auger electron spectroscopy (AES). Growth of both metals occurs uniformly without a seed layer on both dielectrics. The chemical stability of these metal/dielectric interfaces is studied by sequential on-line rapid thermal annealing treatments up to 850 °C and AES. TiNx reacts with SiO2 above 850 °C but the addition of a Si3N4 dielectric top-layer makes the TiNx/ON interface chemically stable at 850 °C. WNx/SiO2 and WNx/Si3N4 interfaces are both stable below 650 °C. MOS capacitors using TiNx or WNx metal gates and thermal SiO2 gate dielectrics exhibit excellent capacitance-voltage characteristics. The work function for TiNx lies near midgap in Si while for WNx it lies closer to the valence band.

Electrical Properties of Oxide-Nitride-Oxide, Ono, Heterostructures Fabricated by Low Temperature Remote PECVD

1992 ◽  
Vol 284 ◽  
Author(s):  
Y. Ma ◽  
T. Yasuda ◽  
Y. L. Chen ◽  
G. Lucovsky ◽  
D. M. Maher
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Flat Band ◽  
Metal Insulator ◽  
Thermally Grown Oxides ◽  
Dielectric Interfaces ◽  
Nitride Oxide

ABSTRACTOxide-Nitride-Oxide, ONO, heterostructures, fabricated by low-temperature, 300°C, Remote Plasma Enhanced Chemical Vapor Deposition, have been used as gate dielectrics in metal insulator semiconductor devices. Analysis of C-V data for this devices indicates that higher levels of fixed charge are associated with the internal dielectric interfaces. A high-temperature, ̃900°C, Rapid Thermal Annealing, RTA, step has been inserted into the process sequence for fabricating ultra-thin, 4.7 nm SiO2 equivalent, device-quality ONO dielectric layers. The electrical properties of these ONO dielectrics, including the Si/SiO2 interfacial trap density, the flat band voltage, the charge to breakdown and the reliability under electron injection are comparable to those of high temperature, thermally-grown oxides.

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

Electrokinetic properties of metal-dielectric interfaces

1993 ◽  
Vol 140 (5) ◽  
pp. 385 ◽  
Author(s):  
T.J. Lewis ◽  
J.P. Llewellyn ◽  
M.J. van der Sluijs
Keyword(s):  
Electrokinetic Properties ◽  
Dielectric Interfaces
Sign in / Sign up

Export Citation Format

Share Document