scholarly journals Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide–nitride gate dielectrics with nitrided crystalline silicon–dielectric interfaces for application in advanced complementary metal–oxide–semiconductor devices

1999 ◽  
Vol 17 (4) ◽  
pp. 1340-1351 ◽  
Author(s):  
G. Lucovsky
Keyword(s):  
Silicon Nitride ◽  
Metal Oxide ◽  
Crystalline Silicon ◽  
Gate Dielectrics ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Silicon Nitride Films ◽  
Dielectric Interfaces ◽  
Reaction Annealing

scholarly journals Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

2000 ◽  
Vol 77 (18) ◽  
pp. 2855-2857 ◽  
Author(s):  
Anri Nakajima ◽  
Takashi Yoshimoto ◽  
Toshiro Kidera ◽  
Katsunori Obata ◽  
Shin Yokoyama ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Metal Oxide ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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