Minimization of mechanical and chemical strain at dielectric-semiconductor and internal dielectric interfaces in stacked gate dielectrics for advanced CMOS devices

2001 ◽  
Author(s):  
Gerry Lucovsky
Keyword(s):  
Gate Dielectrics ◽  
Dielectric Interfaces ◽  
Chemical Strain

Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics

1999 ◽  
Vol 567 ◽  
Author(s):  
G. Lucovsky ◽  
J.C. Phillips
Keyword(s):  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Chemical Bonding ◽  
Gate Dielectrics ◽  
Nuclear Charge ◽  
Dielectric Materials ◽  
Band Offset ◽  
High K ◽  
Dielectric Interfaces ◽  
Mechanical Bonding

ABSTRACTThis paper discusses chemical bonding effects at Si-dielectric interfaces that are important in the implementation of alternative gate dielectrics including: i) the character of interfacial bonds, either isovalent with bond and nuclear charge balanced as in Si-SiO2, or heterovalent, with an inherent mismatch between bond and nuclear charge, ii) mechanical bonding constraints related to the average number of bonds/atom, Nay, and iii) band offset energies that are reduced in transition metal oxides due to the d-state origins of the conduction band states. Applications are made to specific classes of dielectric materials including i) nitrides and oxide/nitride stacks and ii) alternative high-K gate materials.

Investigation of the Growth and Chemical Stability of Composite Metal Gates on Ultra-thin Gate Dielectrics

1998 ◽  
Vol 532 ◽  
Author(s):  
B. Claflin ◽  
M. Binger ◽  
G. Lucovsky ◽  
H.-Y. Yang
Keyword(s):  
Chemical Stability ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Mos Capacitors ◽  
Metal Gates ◽  
Bulk Film ◽  
Chemical Vapor Deposited ◽  
Capacitance Voltage ◽  
Dielectric Interfaces ◽  
On Line

ABSTRACTThe growth of reactively sputtered TiNx and WNx compound metal films on ultra-thin, remote plasma enhanced chemical vapor deposited SiO2 and SiO2/Si3N4 (ON) stack dielectrics is investigated from initial interface formation to bulk film by interrupted growth and on-line Auger electron spectroscopy (AES). Growth of both metals occurs uniformly without a seed layer on both dielectrics. The chemical stability of these metal/dielectric interfaces is studied by sequential on-line rapid thermal annealing treatments up to 850 °C and AES. TiNx reacts with SiO2 above 850 °C but the addition of a Si3N4 dielectric top-layer makes the TiNx/ON interface chemically stable at 850 °C. WNx/SiO2 and WNx/Si3N4 interfaces are both stable below 650 °C. MOS capacitors using TiNx or WNx metal gates and thermal SiO2 gate dielectrics exhibit excellent capacitance-voltage characteristics. The work function for TiNx lies near midgap in Si while for WNx it lies closer to the valence band.

Electrical Properties of Oxide-Nitride-Oxide, Ono, Heterostructures Fabricated by Low Temperature Remote PECVD

1992 ◽  
Vol 284 ◽  
Author(s):  
Y. Ma ◽  
T. Yasuda ◽  
Y. L. Chen ◽  
G. Lucovsky ◽  
D. M. Maher
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Flat Band ◽  
Metal Insulator ◽  
Thermally Grown Oxides ◽  
Dielectric Interfaces ◽  
Nitride Oxide

ABSTRACTOxide-Nitride-Oxide, ONO, heterostructures, fabricated by low-temperature, 300°C, Remote Plasma Enhanced Chemical Vapor Deposition, have been used as gate dielectrics in metal insulator semiconductor devices. Analysis of C-V data for this devices indicates that higher levels of fixed charge are associated with the internal dielectric interfaces. A high-temperature, ̃900°C, Rapid Thermal Annealing, RTA, step has been inserted into the process sequence for fabricating ultra-thin, 4.7 nm SiO2 equivalent, device-quality ONO dielectric layers. The electrical properties of these ONO dielectrics, including the Si/SiO2 interfacial trap density, the flat band voltage, the charge to breakdown and the reliability under electron injection are comparable to those of high temperature, thermally-grown oxides.

Electrokinetic properties of metal-dielectric interfaces

1993 ◽  
Vol 140 (5) ◽  
pp. 385 ◽  
Author(s):  
T.J. Lewis ◽  
J.P. Llewellyn ◽  
M.J. van der Sluijs
Keyword(s):  
Electrokinetic Properties ◽  
Dielectric Interfaces

Controlling Through-Space and Through-Bond Exchange Pathways in Bis-Cobaltocenes for Molecular Spintronics

2019 ◽  
Author(s):  
Sarah Puhl ◽  
Torben Steenbock ◽  
Carmen Herrmann ◽  
Jürgen Heck
Keyword(s):  
Chemical Synthesis ◽  
First Principles ◽  
Information Transfer ◽  
Spin Coupling ◽  
Molecular Spintronics ◽  
Pathways Analysis ◽  
Chemical Strain

Pinching molecules via chemical strain suggests intuitive consequences, such as compression at the pinched site, and clothespin-like opening of other parts of the structure. If this opening affects two spin centers, it should result in reduced communication between them. We show that for a naphthalene-bridged biscobaltocenes with competing through-space and through-bond pathways, the consequences of pinching are far less intuitive: despite the known dominance of through-space interactions, the bridge plays a much larger role for exchange spin coupling than previously assumed. Based on a combination of chemical synthesis, structural, magnetic and redox characterization, and a newly developed first-principles theoretical pathways analysis, we can suggest a comprehensive explanation for this nonintuitive behavior. These results are of interest for molecular spintronics, as naphthalene-linked cobaltocenes can form wires on surfaces for potential spin-only information transfer.

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