Low temperature in situ boron doped Si epitaxial growth by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
1999 ◽
Vol 17
(1)
◽
pp. 213
◽
2001 ◽
Vol 19
(2)
◽
pp. 323
Low‐Temperature Si Epitaxial Growth by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
1992 ◽
Vol 139
(7)
◽
pp. 1983-1988
◽
1996 ◽
Vol 14
(3)
◽
pp. 1072-1075
◽
1998 ◽
Vol 37
(Part 1, No. 2)
◽
pp. 402-407
◽
1993 ◽
Vol 130
(1-2)
◽
pp. 308-312
◽