Effects of process parameters on low‐temperature silicon homoepitaxy by ultrahigh‐vacuum electron‐cyclotron‐resonance chemical‐vapor deposition

1995 ◽  
Vol 78 (6) ◽  
pp. 4112-4117 ◽  
Author(s):  
Heung‐Sik Tae ◽  
Seok‐Hee Hwang ◽  
Sang‐June Park ◽  
Euijoon Yoon ◽  
Ki‐Woong Whang
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Electron Cyclotron

Low Temperature SiGe Heteroepitaxy by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
Sung-Jae Joo ◽  
Ki-Hyun Hwang ◽  
Seok-Hee Hwang ◽  
Euijoon Yoon ◽  
Ki-Woong Whang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Epitaxial Layers

ABSTRACTDislocation-free Si1−xGex epilayers are successfully grown on (100) silicon at 440°C by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV-ECRCVD). The effects of process parameters on the crystallinity of Si1−xGex epitaxial layers were studied. As the GeH4 flow rate increases and consequently Ge fraction increases above 20%, Si1−xGex epilayers become damaged heavily by ions. When Ge fraction is larger than 20%, process parameters like total pressure need to be adjusted to reduce the ion flux for high quality Sil−xGex. Growth rate of Si1−xGex epitaxial layers increases at 440°C with Ge content in the film. It is presumed that the hydrogen desorption from the surface is the rate-limiting step, however, the enhancement in growth rate is comparatively suppressed and delayed.

Low‐temperature silicon homoepitaxy by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition

1994 ◽  
Vol 64 (8) ◽  
pp. 1021-1023 ◽  
Author(s):  
Heung‐Sik Tae ◽  
Seok‐Hee Hwang ◽  
Sang‐June Park ◽  
Euijoon Yoon ◽  
Ki‐Woong Whang
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Electron Cyclotron

scholarly journals Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Teng-Hsiang Chang ◽  
Chiao Chang ◽  
Yen-Ho Chu ◽  
Chien-Chieh Lee ◽  
Jenq-Yang Chang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Smooth Surface ◽  
High Efficiency ◽  
Electron Cyclotron Resonance ◽  
Low Cost ◽  
Chemical Vapor ◽  
Electron Cyclotron

This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.

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