A comparative study of carbon incorporation in heavily doped GaAs and Al[sub 0.3]Ga[sub 0.7]As grown by solid-source molecular beam epitaxy using carbon tetrabromide

1999 ◽  
Vol 17 (3) ◽  
pp. 1180 ◽  
Author(s):  
D. Lubyshev ◽  
M. Micovic ◽  
N. Gratteau ◽  
W.-Z. Cai ◽  
D. L. Miller ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Study ◽  
Molecular Beam ◽  
Carbon Incorporation ◽  
Carbon Tetrabromide ◽  
Heavily Doped

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

Low Carbon Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs Using Dimethylamine Gallane

1993 ◽  
Vol 32 (Part 2, No. 7B) ◽  
pp. L1014-L1016 ◽  
Author(s):  
Kouji Ishikura ◽  
Ken-ichi Hayashi ◽  
Tomokazu Ogawa ◽  
Fumio Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Carbon ◽  
Carbon Incorporation ◽  
Metalorganic Molecular Beam Epitaxy

Comparative study of InN growth on Ga- and N-polarity GaN templates by molecular-beam epitaxy

2003 ◽  
Vol 0 (7) ◽  
pp. 2814-2817 ◽  
Author(s):  
K. Xu ◽  
W. Terashima ◽  
T. Hata ◽  
N. Hashimoto ◽  
M. Yoshitani ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Study ◽  
Molecular Beam

Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy

1988 ◽  
Vol 64 (8) ◽  
pp. 3975-3979 ◽  
Author(s):  
Koki Saito ◽  
Eisuke Tokumitsu ◽  
Takeshi Akatsuka ◽  
Motoya Miyauchi ◽  
Takumi Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Heavily Doped
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