Photon tunneling microscopy of latent resist images

Author(s):  
J. A. Liddle
Author(s):  
John M. Guerra ◽  
Mohan Srinivasarao ◽  
Alex Hsieh

1994 ◽  
Vol 332 ◽  
Author(s):  
John M. Guerra

ABSTRACTWith photon tunneling microscopy (PTM), dielectric, semiconductor, and other surfaces are imaged by means of the phenomenon of photon tunneling (or evanescent waves). Vertical resolution is detector limited to one nanometer and the vertical range is λ/2. Lateral resolution is better than λ/4 with a field-of-view up to approximately 125 µm. PTM produces images of samples independent of size and thickness in real-time without metallization, shadowing, vacuum, electrons, or scanning probes. Tunneling images are analog processed for realtime 3-D topographic imaging with continuous viewpoint and magnification control. In this paper PTM images of a variety of samples are presented and briefly discussed.


Science ◽  
1993 ◽  
Vol 262 (5138) ◽  
pp. 1395-1400 ◽  
Author(s):  
J. M. Guerra ◽  
M. Srinivasarao ◽  
R. S. Stein

1992 ◽  
Vol 279 ◽  
Author(s):  
C. G. Fountzoulas ◽  
J. D. Demaree ◽  
W. E. Kosik ◽  
W. Franzen ◽  
W. Croft ◽  
...  

ABSTRACTi-CxSiyOzHw films were formed by thermal evaporation of a tetraphenyl-tetramethyl-trisiloxane diffusion pump oil onto silicon and steel substrates with simultaneous bombardment of the growing film with 40 keV Ar+ ions to decompose the (C6H5)4(CH3)4Si3O2 molecules. Both the current density of the ion beam and the oil arrival rate were varied to produce hard, adhesive films on room temperature substrates, with densities ranging from 1.4 to 2.3 g/cm3 and Knoop microhardness values (at 15 g load) from 1000 to 2100. Unlubricated friction coefficients against a 440C steel ball with a 50 g load ranged from 0.03 to 0.40, depending on deposition conditions, and all films were more wear-resistant than the substrate materials. The films were examined with RBS, hydrogen forward recoil scattering, SEM, TEM, photon tunneling microscopy, electron diffraction, and ellipsometry to ascertain and correlate their chemical compositions and microstructures with their mechanical/chemical properties (microhardness, adhesion, friction and wear).


1992 ◽  
Vol 00 (6) ◽  
pp. 8-8 ◽  
Author(s):  
John M. Guerra

The Photon Tunneling Microscope is used to provide high resolution (subnanometer vertical), quantifiable, real-time, 3-D (with continuously variable viewpoint) imaging and profilometry of homogenous dielectric samples, whether transparent or absorbing. A partial list of these includes: thin films (micraroughness. damage evaluation, step height) optical storage media (pit depth and shape measurement), magnetic media (microroughness, wear tracks), polymers (surface characterization), optical surfaces (microroughness, damage, polishing evaluation), diamond-turned optical surfaces (tool and machine characteristics from surface topography), binary optic surfaces, porous silicon structure, photographic grain analysis, replicas of metal surfaces, microlithography evaluation, and manufacturing web evaluation (film base, magnetic media base).


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