Two-dimensional dopant profiling of very large scale integrated devices using selective etching and atomic force microscopy

1996 ◽  
Vol 14 (1) ◽  
pp. 447 ◽  
Author(s):  
M. Barrett
Keyword(s):  
Atomic Force Microscopy ◽  
Large Scale ◽  
Selective Etching ◽  
Two Dimensional ◽  
Dopant Profiling ◽  
Force Microscopy ◽  
Atomic Force ◽  
Integrated Devices

Corrigendum to “Atomic force microscopy for two-dimensional materials: A tutorial review” [Opt. Commun. 406 (2018) 3–17]

2018 ◽  
Vol 421 ◽  
pp. 134
Author(s):  
Hang Zhang ◽  
Junxiang Huang ◽  
Yongwei Wang ◽  
Rui Liu ◽  
Xiulan Huai ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Two Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Two Dimensional Materials

Imaging Two-dimensional Crystals of Catalase by Atomic Force Microscopy

1996 ◽  
Vol 35 (Part 1, No. 12A) ◽  
pp. 6233-6238 ◽  
Author(s):  
Satomi Ohnishi ◽  
Masahiko Hara ◽  
Taiji Furuno ◽  
Hiroyuki Sasabe
Keyword(s):  
Atomic Force Microscopy ◽  
Two Dimensional ◽  
Force Microscopy ◽  
Atomic Force

GROWTH HILLOCKS ON THE {100} FACES OF L-ARGININE PHOSPHATE MONOHYDRATE SINGLE CRYSTALS INVESTIGATED BY ATOMIC FORCE MICROSCOPY

2004 ◽  
Vol 11 (01) ◽  
pp. 71-75
Author(s):  
Y. L. GENG ◽  
D. XU ◽  
D. L. SUN ◽  
X. Q. WANG ◽  
G. H. ZHANG ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Stress Field ◽  
Single Crystals ◽  
Liquid Flow ◽  
Two Dimensional ◽  
Characteristic Structure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dislocation Sources ◽  
Extra Stress

Growth hillocks on the {100} faces of L-arginine phosphate monohydrate (LAP) single crystals grown at 25°C and at a supersaturation of 0.32 have been discussed. The typical dislocation growth hillocks are lopsided and elongate along the b direction. The dislocation sources are probably caused by the extra stress field which is introduced by the hollow cavities distributing on the steps and hillocks generated by the two-dimensional nucleus. The elongated shape is due to the characteristic structure of the LAP crystal. Apart from that, the formation of the lopsided growth hillocks is explained by the liquid flow theory.

Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tips

1995 ◽  
Vol 13 (3) ◽  
pp. 1699-1704 ◽  
Author(s):  
P. De Wolf ◽  
J. Snauwaert ◽  
L. Hellemans ◽  
T. Clarysse ◽  
W. Vandervorst ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Dopant Profiling ◽  
Force Microscopy ◽  
Atomic Force
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