Experimental evaluation of an electron-beam pulse modulated blanker (160 MHz) for next-generation electron-beam raster scan systems

1995 ◽  
Vol 13 (6) ◽  
pp. 2488
Author(s):  
Andrew Muray
Keyword(s):  
Electron Beam ◽  
Experimental Evaluation ◽  
Next Generation ◽  
Electron Beam Pulse ◽  
Raster Scan

scholarly journals Supershort avalanche electron beam generation in gases

2008 ◽  
Vol 26 (4) ◽  
pp. 605-617 ◽  
Author(s):  
V.F. Tarasenko ◽  
E.H. Baksht ◽  
A.G. Burachenko ◽  
I.D. Kostyrya ◽  
M.I. Lomaev ◽  
...  
Keyword(s):  
High Pressure ◽  
Electron Beam ◽  
Atmospheric Pressure ◽  
Electron Beams ◽  
Solid Angle ◽  
Generation Mechanism ◽  
Full Width ◽  
Half Maximum ◽  
Electron Beam Pulse ◽  
Supershort Avalanche Electron Beam

AbstractThis paper reports on the properties of a supershort avalanche electron beam generated in the air or other gases under atmospheric pressure and gives the analysis of a generation mechanism of supershort avalanche electron beam, as well as methods of such electron beams registration. It is reported that in the air under the pressure of 1 atm, a supershort (<100 ps) avalanche electron beam is formed in the solid angle more than 2π steradian. The electron beam has been obtained behind a 45 µm thick Al-Be foil in SF6 and Xe under the pressure of 2 atm, and in He, under the pressure of about 15 atm. It is shown that in SF6 under the high pressure (>1 atm) duration (full width at half maximum) of supershort avalanche electron beam pulse is about 150 ps.

Particle Contamination Control Technology in Electron Beam Mask Writing System for Next-Generation Mask Fabrication

2002 ◽  
Vol 41 (Part 1, No. 9) ◽  
pp. 5835-5840
Author(s):  
Kiminobu Akeno ◽  
Munehiro Ogasawara ◽  
Kenji Ooki ◽  
Toru Tojo ◽  
Ryoichi Hirano ◽  
...  
Keyword(s):  
Electron Beam ◽  
Control Technology ◽  
Writing System ◽  
Next Generation ◽  
Contamination Control ◽  
Particle Contamination ◽  
Mask Fabrication

Evolution of an electron beam pulse influenced by coulomb collision effects in the solar corona

2020 ◽  
Vol 65 (3) ◽  
pp. 1062-1069
Author(s):  
G.A. Casillas-Pérez ◽  
S. Jeyakumar ◽  
A. Carrillo-Vargas ◽  
H.R. Pérez-Enríquez
Keyword(s):  
Electron Beam ◽  
Solar Corona ◽  
Coulomb Collision ◽  
Electron Beam Pulse

scholarly journals Observation of the tungsten surface damage under ITER-relevant transient heat loads during and after electron beam pulse

2016 ◽  
Author(s):  
A. A. Vasilyev ◽  
A. S. Arakcheev ◽  
I. A. Bataev ◽  
V. A. Bataev ◽  
A. V. Burdakov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Surface Damage ◽  
Electron Beam Pulse ◽  
Tungsten Surface ◽  
Heat Loads

A Study of Electrically Active Defects Induced by Pulsed Electron Beam Annealing In (100) N-Type Virgin Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
M.S. Doghmane ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Surface Layer ◽  
Electron Beam ◽  
Layer Thickness ◽  
Schottky Contacts ◽  
Probable Mechanism ◽  
Electron Trap ◽  
Melting Layer ◽  
Pulsed Electron Beam ◽  
Depth Profiles ◽  
Electron Beam Pulse

ABSTRACTAu/Si Schottky contacts have been used as test structures to investigate defects induced in virgin C.Z (100) N-type silicon after irradiation with a 12 to 20 KeV mean energy electron beam pulse. A thin and highly damaged surface layer was observed from a fluence threshold of 1 J/cm2. In addition electron traps were detected in the PEBA induced melting layer with concentrations in the 1012-1013 cm-3 range. Their depth profiles have been related to the PEBA induced melting layer thickness. Quenching of multidefect complexes is the most probable mechanism for electron trap generation in the processed layer.

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