A Study of Electrically Active Defects Induced by Pulsed
Electron Beam Annealing In (100) N-Type Virgin Silicon
ABSTRACTAu/Si Schottky contacts have been used as test structures to investigate defects induced in virgin C.Z (100) N-type silicon after irradiation with a 12 to 20 KeV mean energy electron beam pulse. A thin and highly damaged surface layer was observed from a fluence threshold of 1 J/cm2. In addition electron traps were detected in the PEBA induced melting layer with concentrations in the 1012-1013 cm-3 range. Their depth profiles have been related to the PEBA induced melting layer thickness. Quenching of multidefect complexes is the most probable mechanism for electron trap generation in the processed layer.