scholarly journals Observation of the tungsten surface damage under ITER-relevant transient heat loads during and after electron beam pulse

2016 ◽  
Author(s):  
A. A. Vasilyev ◽  
A. S. Arakcheev ◽  
I. A. Bataev ◽  
V. A. Bataev ◽  
A. V. Burdakov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Surface Damage ◽  
Electron Beam Pulse ◽  
Tungsten Surface ◽  
Heat Loads

scholarly journals The effect of high-flux H plasma exposure with simultaneous transient heat loads on tungsten surface damage and power handling

2014 ◽  
Vol 54 (12) ◽  
pp. 123010 ◽  
Author(s):  
G.G. van Eden ◽  
T.W. Morgan ◽  
H.J. van der Meiden ◽  
J. Matejicek ◽  
T. Chraska ◽  
...  
Keyword(s):  
Surface Damage ◽  
High Flux ◽  
Plasma Exposure ◽  
Power Handling ◽  
Tungsten Surface ◽  
Heat Loads

scholarly journals Supershort avalanche electron beam generation in gases

2008 ◽  
Vol 26 (4) ◽  
pp. 605-617 ◽  
Author(s):  
V.F. Tarasenko ◽  
E.H. Baksht ◽  
A.G. Burachenko ◽  
I.D. Kostyrya ◽  
M.I. Lomaev ◽  
...  
Keyword(s):  
High Pressure ◽  
Electron Beam ◽  
Atmospheric Pressure ◽  
Electron Beams ◽  
Solid Angle ◽  
Generation Mechanism ◽  
Full Width ◽  
Half Maximum ◽  
Electron Beam Pulse ◽  
Supershort Avalanche Electron Beam

AbstractThis paper reports on the properties of a supershort avalanche electron beam generated in the air or other gases under atmospheric pressure and gives the analysis of a generation mechanism of supershort avalanche electron beam, as well as methods of such electron beams registration. It is reported that in the air under the pressure of 1 atm, a supershort (<100 ps) avalanche electron beam is formed in the solid angle more than 2π steradian. The electron beam has been obtained behind a 45 µm thick Al-Be foil in SF6 and Xe under the pressure of 2 atm, and in He, under the pressure of about 15 atm. It is shown that in SF6 under the high pressure (>1 atm) duration (full width at half maximum) of supershort avalanche electron beam pulse is about 150 ps.

Temperature Dependence of Surface Morphology of Silicon Grown on CaF2/Si by Electron Beam Assisted Mbe

1994 ◽  
Vol 367 ◽  
Author(s):  
P.O. Pettersson ◽  
R.J. Miles ◽  
T.C. Mcgill
Keyword(s):  
Surface Roughness ◽  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
Silicon Layer ◽  
Surface Damage ◽  
Low Energy ◽  
Growth Mode ◽  
Optimal Range ◽  
Low Energy Electrons ◽  
Ordered Array

AbstractWe present the results of electron beam assisted molecular beam epitaxy (EB-MBE) on the growth mode of silicon on CaF2/Si(111). By irradiating the CaF2 surface with low energy electrons, the fluorine is desorbed, leaving an ordered array of F-centers behind. Using atomic force microscopy (AFM), we do not detect any surface damage on the CaF2 layer due to the low energy electron irradiation. The surface free energy of the CaF2 is raised due to the F-center array and the subsequent silicon layer is smoother. Using AFM and X-ray photoelectron spectroscopy (XPS), we find an optimal range of exposures for high temperature (650°C) growth of the silicon overlayer that minimizes surface roughness of the silicon overlayer and we present a simple model based on geometrical thermodynamics to explain this.We observed a similar optimal range of exposures that minimizes the surface roughness for medium (575°C) and low (500°C) growth temperatures of the silicon layer. We present an explanation for this growth mode based on kinetics.

Evolution of an electron beam pulse influenced by coulomb collision effects in the solar corona

2020 ◽  
Vol 65 (3) ◽  
pp. 1062-1069
Author(s):  
G.A. Casillas-Pérez ◽  
S. Jeyakumar ◽  
A. Carrillo-Vargas ◽  
H.R. Pérez-Enríquez
Keyword(s):  
Electron Beam ◽  
Solar Corona ◽  
Coulomb Collision ◽  
Electron Beam Pulse

scholarly journals In-situ imaging of tungsten surface modification under ITER-like transient heat loads

2017 ◽  
Vol 12 ◽  
pp. 553-558 ◽  
Author(s):  
A.A. Vasilyev ◽  
A.S. Arakcheev ◽  
I.A. Bataev ◽  
V.A. Bataev ◽  
A.V. Burdakov ◽  
...  
Keyword(s):  
Surface Modification ◽  
Tungsten Surface ◽  
Heat Loads ◽  
In Situ Imaging

A Study of Electrically Active Defects Induced by Pulsed Electron Beam Annealing In (100) N-Type Virgin Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
M.S. Doghmane ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Surface Layer ◽  
Electron Beam ◽  
Layer Thickness ◽  
Schottky Contacts ◽  
Probable Mechanism ◽  
Electron Trap ◽  
Melting Layer ◽  
Pulsed Electron Beam ◽  
Depth Profiles ◽  
Electron Beam Pulse

ABSTRACTAu/Si Schottky contacts have been used as test structures to investigate defects induced in virgin C.Z (100) N-type silicon after irradiation with a 12 to 20 KeV mean energy electron beam pulse. A thin and highly damaged surface layer was observed from a fluence threshold of 1 J/cm2. In addition electron traps were detected in the PEBA induced melting layer with concentrations in the 1012-1013 cm-3 range. Their depth profiles have been related to the PEBA induced melting layer thickness. Quenching of multidefect complexes is the most probable mechanism for electron trap generation in the processed layer.

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