Estimation of charge buildup during plasma processing by measuring metal–oxide thickness

1995 ◽  
Vol 13 (3) ◽  
pp. 889
Author(s):  
K. Machida
Keyword(s):  
Metal Oxide ◽  
Plasma Processing ◽  
Oxide Thickness

scholarly journals Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
J. H. Yum ◽  
J. Oh ◽  
Todd. W. Hudnall ◽  
C. W. Bielawski ◽  
G. Bersuker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Field Effect Transistors ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Effective Electron

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

A mechanistic model for oxide growth and dissolution during corrosion of Cr-containing alloys

2015 ◽  
Vol 180 ◽  
pp. 113-135 ◽  
Author(s):  
M. Momeni ◽  
J. C. Wren
Keyword(s):  
Metal Oxide ◽  
Oxide Layer ◽  
Metal Cation ◽  
Corrosion Behaviour ◽  
Mechanistic Model ◽  
Potential Drop ◽  
Oxide Thickness ◽  
Oxide Growth ◽  
Metal Oxidation ◽  
Charge Balance

We have developed a corrosion model that can predict metal oxide growth and dissolution rates as a function of time for a range of solution conditions. Our model considers electrochemical reactions at the metal/oxide and oxide/solution interfaces, and the metal cation flux from the metal to the solution phase through a growing oxide layer, and formulates the key processes using classical chemical reaction rate or flux equations. The model imposes mass and charge balance and hence, is labeled as the Mass Charge Balance (MCB) model. Mass and charge balance dictate that at any given time the oxidation (or metal cation) flux must be equal to the sum of the oxide growth flux and the dissolution flux. For each redox reaction leading to the formation of a specific oxide, the metal oxidation flux is formulated using a modified Butler–Volmer equation with an oxide-thickness-dependent effective overpotential. The oxide growth and dissolution fluxes have a first-order dependence on the metal cation flux. The rate constant for oxide formation also follows an Arrhenius dependence on the potential drop across the oxide layer and hence decreases exponentially with oxide thickness. This model is able to predict the time-dependent potentiostatic corrosion behaviour of both pure iron, and Co–Cr and Fe–Ni–Cr alloys.

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