Monolithic integration of InGaAsp/Inp lasers and heterostructure bipolar transistors by selective area epitaxy

1993 ◽  
Vol 29 (8) ◽  
pp. 645 ◽  
Author(s):  
X. An ◽  
H. Temkin ◽  
A. Feygenson ◽  
R.A. Hamm ◽  
M.A. Cotta ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Selective Area Epitaxy ◽  
Selective Area

Selective Area Epitaxy for Optoelectronic Devices

1993 ◽  
Vol 300 ◽  
Author(s):  
H. Temkin ◽  
R. A. Hamm ◽  
A. Feygenson ◽  
M. A. Cotta ◽  
L. R. Harriott ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Optoelectronic Devices ◽  
Bipolar Transistors ◽  
Powerful Method ◽  
Selective Area Epitaxy ◽  
Optoelectronic Integrated Circuits ◽  
Selective Area

ABSTRACTWe discuss the characteristics of MOMBE based selective area epitaxy useful in the preparation of optoelectronic devices. Selective area epitaxy, a process in which epitaxy is restricted only to the areas opened in a suitably prepared dielectric mask, offers a powerful method of preparing high performance devices, varying the thickness and composition of the grown layers simply by controlling the width of the open areas and monolithically integrating different device types on common substrates. Lasers, heterostructure bipolar transistors, and optoelectronic integrated circuits based on InGaAs/InP system and relying on selective area epitaxy are described.

scholarly journals Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 330 ◽  
Author(s):  
Marina Baryshnikova ◽  
Yves Mols ◽  
Yoshiyuki Ishii ◽  
Reynald Alcotte ◽  
Han Han ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Defect Density ◽  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Threading Dislocation ◽  
Contrast Imaging ◽  
Si Substrates ◽  
Selective Area ◽  
Transmission Electron ◽  
The Impact

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area

Selective Area Epitaxy of InGaN/GaN Stripes, Hexagonal Rings, and Triangular Rings for Achieving Green Emission

2009 ◽  
Vol 1202 ◽  
Author(s):  
Wen Feng ◽  
Vladimir Kuryatkov ◽  
Dana Rosenbladt ◽  
Nenad Stojanovic ◽  
Mahesh Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
Single Type ◽  
Selective Area Epitaxy ◽  
Polar Crystal ◽  
Selective Area ◽  
Narrow Ridge ◽  
Intensity Images ◽  
Two Peaks ◽  
Surface Morphologies

AbstractWe report selective area epitaxy of InGaN/GaN micron-scale stripes and rings on patterned (0001) AlN/sapphire. The objective is to elevate indium incorporation for achieving blue and green emission on semi-polar crystal facets. In each case, GaN structures were first produced, and the InGaN quantum wells (QWs) were subsequently grown. The pyramidal InGaN/GaN stripe along the <11-20> direction has uniform CL emission at 500 nm on the smooth {1-101} sidewall and at 550 nm on the narrow ridge. In InGaN/GaN triangular rings, the structures reveal smooth inner and outer sidewall facets falling into a single type of {1-101} planes. All these {1-101} sidewall facets demonstrate similar CL spectra which appear to be the superposition of two peaks at positions 500 nm and 460 nm. Spatially matched striations are observed in the CL intensity images and surface morphologies of the {1-101} sidewall facets. InGaN/GaN hexagonal rings are comprised of {11-22} and {21-33} facets on inner sidewalls, and {1-101} facets on outer sidewalls. Distinct CL spectra with peak wavelengths as long as 500 nm are observed for these diverse sidewall facets of the hexagonal rings.

Laser selective area epitaxy of GaAs metal‐semiconductor‐field‐effect transistor

1991 ◽  
Vol 58 (15) ◽  
pp. 1659-1661 ◽  
Author(s):  
H. Liu ◽  
J. C. Roberts ◽  
J. Ramdani ◽  
S. M. Bedair
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Effect Transistor

scholarly journals High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration

2009 ◽  
Vol 30 (11) ◽  
pp. 1161-1163 ◽  
Author(s):  
Hyun-Yong Yu ◽  
Shen Ren ◽  
Woo Shik Jung ◽  
A.K. Okyay ◽  
D.A.B. Miller ◽  
...  
Keyword(s):  
High Efficiency ◽  
Monolithic Integration ◽  
Selective Area

GaInP Selective Area Epitaxy for Heterojunction Bipolar Transistor Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
S. H. PARK ◽  
S.-L. FU ◽  
P. K. L. YU ◽  
P. M. ASBECK
Keyword(s):  
Light Field ◽  
Defect Density ◽  
Forward Bias ◽  
Dark Field ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Selective Area Epitaxy ◽  
Metal Base ◽  
Selective Area

AbstractA study of selective area epitaxy (SAE) of GalnP lattice matched to GaAs is presented. The selectively regrown GaInP is used as the emitter of a novel heterojunction bipolar transistor (HBT) device structure. Successful SAE of GalnP on both dark field (mostly covered) and light field (mostly open) SiO2 masks is compared. To characterize the critical regrown heterojunction, diodes and HBTs were fabricated and measured. It is found that a pre-growth pause of either TEGa or PH3 results in forward bias characteristics with low leakage and an ideality factor of ~1.25, indicating low interfacial defect density. Non-self aligned regrown emitter HBTs grown with a dark field mask scheme have been fabricated. Devices with an emitter area of 3x12 μm exhibit small signal current gain up to 80 with an fT and fMAX of 22 GHz and 18 GHz, respectively. To further improve the performance of these devices, a structure with a self-aligned refractory metal base contact and light field regrowth is proposed.

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