Comparative study of cross-sectional scanning tunneling microscopy/spectroscopy on III–V hetero- and homostructures: Ultrahigh vacuum-cleaved versus sulfide passivated

1994 ◽  
Vol 12 (4) ◽  
pp. 2610 ◽  
Author(s):  
A. R. Smith
Keyword(s):  
Comparative Study ◽  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

In Situ Cross-Sectional Scanning Tunneling Microscopy Sample Preparation Technique

1995 ◽  
Vol 399 ◽  
Author(s):  
Y.-C. Kim ◽  
M. J. Nowakowski ◽  
D. N. Seidman
Keyword(s):  
Sample Preparation ◽  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Preparation Technique ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Sample Preparation Technique

ABSTRACTA novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy (XSTM) applications. This technique can be easily adapted to any ultrahigh vacuum (UHV) STM that has a coarse motion capability. A conducting diamond STM tip is used to create micron long scratches on Ge/GaAs or GaAs {001 }-type surfaces. These {001} surfaces are imaged with STM to observe scratch characteristics, and GaAs samples are cleaved to reveal {110}-type faces. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

scholarly journals Layer-by-Layer Pyramid Formation from Low-Energy Ar+ Bombardment and Annealing of Ge (110)

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2521
Author(s):  
Marshall van Zijll ◽  
Samantha S. Spangler ◽  
Andrew R. Kim ◽  
Hazel R. Betz ◽  
Shirley Chiang
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Surface Damage ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
Sample Holder ◽  
Tunneling Microscopy ◽  
Ion Energies ◽  
20 Nm

Isolated pyramids, 30–80 nm wide and 3–20 nm tall, form during sputter-annealing cycles on the Ge (110) surface. Pyramids have four walls with {19 13 1} faceting and a steep mound at the apex. We used scanning tunneling microscopy (STM) under ultrahigh vacuum conditions to periodically image the surface at ion energies between 100 eV and 500 eV and incremental total flux. Pyramids are seen using Ar+ between 200 eV and 400 eV, and require Ag to be present on the sample or sample holder. We suspect that the pyramids are initiated by Ag co-sputtered onto the surface. Growth of pyramids is due to the gathering of step edges with (16 × 2) reconstruction around the pyramid base during layer-by-layer removal of the substrate, and conversion to {19 13 1} faceting. The absence of pyramids using Ar+ energies above 400 eV is likely due to surface damage that is insufficiently annealed.

Cross-sectional scanning tunneling microscopy of biased semiconductor lasers

2007 ◽  
Vol 102 (2) ◽  
pp. 024306 ◽  
Author(s):  
R. J. Cobley ◽  
K. S. Teng ◽  
M. R. Brown ◽  
S. P. Wilks
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Semiconductor Lasers ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional
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