Cross-sectional scanning tunneling microscopy of biased semiconductor lasers

R. J. Cobley; K. S. Teng; M. R. Brown; S. P. Wilks

doi:10.1063/1.2757006

Cross-sectional scanning tunneling microscopy of biased semiconductor lasers

Journal of Applied Physics ◽

10.1063/1.2757006 ◽

2007 ◽

Vol 102 (2) ◽

pp. 024306 ◽

Cited By ~ 3

Author(s):

R. J. Cobley ◽

K. S. Teng ◽

M. R. Brown ◽

S. P. Wilks

Keyword(s):

Scanning Tunneling Microscopy ◽

Semiconductor Lasers ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy

Applied Surface Science ◽

10.1016/j.apsusc.2010.03.089 ◽

2010 ◽

Vol 256 (19) ◽

pp. 5736-5739 ◽

Cited By ~ 2

Author(s):

R.J. Cobley ◽

K.S. Teng ◽

M.R. Brown ◽

P. Rees ◽

S.P. Wilks

Keyword(s):

Scanning Tunneling Microscopy ◽

Semiconductor Lasers ◽

Surface Defects ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy

Physical Review Materials ◽

10.1103/physrevmaterials.1.034606 ◽

2017 ◽

Vol 1 (3) ◽

Cited By ~ 7

Author(s):

C. M. Krammel ◽

M. Roy ◽

F. J. Tilley ◽

P. A. Maksym ◽

L. Y. Zhang ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Atomic Scale ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Comparative study of cross-sectional scanning tunneling microscopy/spectroscopy on III–V hetero- and homostructures: Ultrahigh vacuum-cleaved versus sulfide passivated

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587218 ◽

1994 ◽

Vol 12 (4) ◽

pp. 2610 ◽

Cited By ~ 13

Author(s):

A. R. Smith

Keyword(s):

Comparative Study ◽

Scanning Tunneling Microscopy ◽

Ultrahigh Vacuum ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Composition Profile of MOVPE Grown InP/InGaAs/InP Quantum Well Structures Studied by Cross-Sectional Scanning Tunneling Microscopy

10.1063/1.2729798 ◽

2007 ◽

Author(s):

I. Yamakawa ◽

Y. Akanuma ◽

W. S. Lee ◽

T. Ujihara ◽

Y. Takeda ◽

...

Keyword(s):

Quantum Well ◽

Scanning Tunneling Microscopy ◽

Composition Profile ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Quantum Well Structures

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Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_22 ◽

1993 ◽

pp. 207-216

Author(s):

M. B. Johnson ◽

U. Maier ◽

H. P. Meier ◽

H. Salemink ◽

E. T. Yu ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Atomic Scale ◽

Scanning Tunneling ◽

Epitaxial Layers ◽

Tunneling Microscopy ◽

Cross Sectional

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Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces

Semiconductor Interfaces at the Sub-Nanometer Scale ◽

10.1007/978-94-011-2034-0_14 ◽

1993 ◽

pp. 127-137 ◽

Cited By ~ 2

Author(s):

R. M. Feenstra ◽

A. Vaterlaus ◽

E. T. Yu ◽

P. D. Kirchner ◽

C. L. Lin ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Analyzing real-time surface modification of operating semiconductor laser diodes using cross-sectional scanning tunneling microscopy

Journal of Applied Physics ◽

10.1063/1.3380826 ◽

2010 ◽

Vol 107 (9) ◽

pp. 094507 ◽

Cited By ~ 1

Author(s):

R. J. Cobley ◽

P. Rees ◽

K. S. Teng ◽

S. P. Wilks

Keyword(s):

Surface Modification ◽

Scanning Tunneling Microscopy ◽

Semiconductor Laser ◽

Real Time ◽

Laser Diodes ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Semiconductor Laser Diodes

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InGaP/GaAs HETEROINTERFACES STUDIED BY CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY AND THEIR IMPACT ON THE DEVICE CHARACTERISTICS

Physics, Chemistry and Application of Nanostructures ◽

10.1142/9789814280365_0003 ◽

2009 ◽

Author(s):

S. NOZAKI ◽

A. KOIZUMI ◽

K. UCHIDA ◽

H. ONO

Keyword(s):

Scanning Tunneling Microscopy ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study

10.1063/1.2729793 ◽

2007 ◽

Author(s):

Y. Akanuma ◽

I. Yamakawa ◽

Y. Sakuma ◽

T. Usuki ◽

A. Nakamura

Keyword(s):

Quantum Dots ◽

Scanning Tunneling Microscopy ◽

Microscopy Study ◽

Interfacial Structure ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Inp Quantum Dots ◽

Scanning Tunneling Microscopy Study ◽

Cap Method

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Double capping of molecular beam epitaxy grown InAs∕InP quantum dots studied by cross-sectional scanning tunneling microscopy

Applied Physics Letters ◽

10.1063/1.2771063 ◽

2007 ◽

Vol 91 (7) ◽

pp. 073106 ◽

Cited By ~ 19

Author(s):

J. M. Ulloa ◽

P. M. Koenraad ◽

E. Gapihan ◽

A. Létoublon ◽

N. Bertru

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Inp Quantum Dots

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