Fabrication and performance of GaAs metal–semiconductor field effect transistors with step-graded striped focused ion beam doping in the channel regions

1994 ◽  
Vol 12 (1) ◽  
pp. 158 ◽  
Author(s):  
T. Hussain
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
And Performance

scholarly journals Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

2017 ◽  
Vol 23 (5) ◽  
pp. 916-925
Author(s):  
Pritesh Parikh ◽  
Corey Senowitz ◽  
Don Lyons ◽  
Isabelle Martin ◽  
Ty J. Prosa ◽  
...  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Atom Probe ◽  
Physical Structure ◽  
Oxide Semiconductor ◽  
Device Performance

AbstractThe semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

Focused Ion Beam Exposure of Ultrathin Electron-Beam Resist for Nanoscale Field-Effect Transistor Contacts Formation

2021 ◽  
Vol 26 (5) ◽  
pp. 353-362
Author(s):  
K.A. Tsarik ◽  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Dielectric Substrate ◽  
Silicon Nanostructures ◽  
Metal Contacts ◽  
Ion Beam Lithography ◽  
Speed Performance ◽  
Optical Electron

The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by greater susceptibility to resist, high value of backward scattering, proximity effect, and best ratio of speed performance and contrast to exposed elements’ minimal size, compared to e-beam lithography. In this work, a method of ultrathin resist exposure by focused ion beam is developed. Electron-sensitive resist thickness dependence on increase of its toluene dilution was established. It was shown that electron-sensitive resist thinning down to 30 μm based on α-chloro-methacrylate with α-methylstyrene allows the 500-nm gapped metal contacts formation over a span of 30 μm. Silicon nanostructures within metallic nanoscale gap on dielectric substrate have been obtained. The geometry of obtained nanostructures was studied by optical, electron, ion, and probe microscopy. It has been established that it is possible to not use additional alignment keys when nanoscale field-effect transistors are created based on silicon nanostructures.

Focused ion-beam implanted lateral field-effect transistors on bulk silicon

1997 ◽  
Vol 82 (9) ◽  
pp. 4616-4620 ◽  
Author(s):  
C. Crell ◽  
S. Friedrich ◽  
H.-U. Schreiber ◽  
A. D. Wieck
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Bulk Silicon ◽  
Lateral Field

Improved performance of ZnO nanowire field-effect transistors via focused ion beam treatment

2011 ◽  
Vol 22 (37) ◽  
pp. 375201 ◽  
Author(s):  
Zhi-Min Liao ◽  
Yi Lu ◽  
Han-Chun Wu ◽  
Ya-Qing Bie ◽  
Yang-Bo Zhou ◽  
...  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Zno Nanowire ◽  
Ion Beam Treatment ◽  
Improved Performance

SiGe Nanowire Field Effect Transistors

2008 ◽  
Vol 8 (1) ◽  
pp. 457-460 ◽  
Author(s):  
Cheng Qi ◽  
Yaswanth Rangineni ◽  
Gary Goncher ◽  
Raj Solanki ◽  
Kurt Langworthy ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Boron Doped ◽  
High K ◽  
Pt Electrodes ◽  
Effect Transistor

Si0.5Ge0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a high-k (HfO2) insulator and Pt electrodes, made via FIB produced devices with effective hole mobilities of about 50 cm2V−1s−1. Similar transistors with Ti/Au electrodes made via EBL had effective hole mobilities of about 350 cm2V−1s−1.

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