The effect of focused ion‐beam implantation on the threshold voltage of short‐channel silicon metal–oxide–semiconductor field‐effect transistors

Amer Ahmed; S. Noor Mohammad; Ronald L. Carter

doi:10.1063/1.360469

The effect of focused ion‐beam implantation on the threshold voltage of short‐channel silicon metal–oxide–semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.360469 ◽

1995 ◽

Vol 78 (12) ◽

pp. 7007-7017 ◽

Cited By ~ 2

Author(s):

Amer Ahmed ◽

S. Noor Mohammad ◽

Ronald L. Carter

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Focused Ion Beam ◽

Field Effect Transistors ◽

Ion Beam ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Ion Beam Implantation

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Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.7222 ◽

1999 ◽

Vol 38 (Part 1, No. 12B) ◽

pp. 7222-7226 ◽

Cited By ~ 1

Author(s):

Hiroki Kondo ◽

Kenta Izumikawa ◽

Masakazu Sakurai ◽

Shin-ichi Baba ◽

Hirotaka Iwano ◽

...

Keyword(s):

Metal Oxide ◽

Coulomb Blockade ◽

Field Effect ◽

Focused Ion Beam ◽

Field Effect Transistors ◽

Ion Beam ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nano Scale ◽

Ion Beam Implantation

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Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon–Germanium-On-Insulator (SGOI) Metal–Oxide–Semiconductor Field-Effect Transistors with Localized Charges

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2014.3332 ◽

2014 ◽

Vol 11 (1) ◽

pp. 165-172 ◽

Cited By ~ 1

Author(s):

Mirgender Kumar ◽

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Strained Si

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.054301 ◽

2012 ◽

Vol 51 ◽

pp. 054301 ◽

Cited By ~ 5

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.054301 ◽

2012 ◽

Vol 51 (5R) ◽

pp. 054301 ◽

Cited By ~ 14

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3488605 ◽

2010 ◽

Vol 108 (7) ◽

pp. 074508 ◽

Cited By ~ 47

Author(s):

Pramod Kumar Tiwari ◽

Sarvesh Dubey ◽

Manjeet Singh ◽

S. Jit

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel

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Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.5.041302 ◽

2012 ◽

Vol 5 (4) ◽

pp. 041302 ◽

Cited By ~ 21

Author(s):

Mitsuo Okamoto ◽

Youichi Makifuchi ◽

Miwako Iijima ◽

Yoshiyuki Sakai ◽

Noriyuki Iwamuro ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Voltage Instability

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Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.08jc02 ◽

2010 ◽

Vol 49 (8) ◽

pp. 08JC02 ◽

Cited By ~ 9

Author(s):

Koji Eriguchi ◽

Yoshinori Nakakubo ◽

Asahiko Matsuda ◽

Masayuki Kamei ◽

Yoshinori Takao ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Process ◽

Voltage Instability ◽

Process Damage

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Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

Applied Physics Letters ◽

10.1063/1.3549178 ◽

2011 ◽

Vol 98 (5) ◽

pp. 053501 ◽

Cited By ~ 3

Author(s):

Anri Nakajima ◽

Takashi Kudo ◽

Takashi Ito

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Power Operation ◽

Ultralow Power ◽

Tunnel Injection ◽

Trap Charges

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