High-quality strained quantum wires grown by molecular beam epitaxy on (100) GaAs substrate

1994 ◽  
Vol 12 (2) ◽  
pp. 1280
Author(s):  
Y.-P. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Quantum Wires ◽  
High Quality

Preparation and Patterning of GaSb Surfaces with Br-IBAE for Antimonide Based Molecular Beam Epitaxy

2003 ◽  
Vol 792 ◽  
Author(s):  
S.R. Vangala ◽  
B. Krejca ◽  
K. Krishnaswami ◽  
H. Dauplaise ◽  
X. Qian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Oxide Layer ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Subsurface Damage ◽  
High Quality

ABSTRACTBromine Ion Beam Assisted Etching (Br-IBAE) is shown to be useful in removing GaSb wafer chemical mechanical polish (CMP) surface and subsurface damage; creating microstructure patterns in GaSb surfaces through stencil, photoresist, and oxides masks; and stabilizing the as-etched GaSb surface with a thin, easily thermally desorbed oxide layer. Thus, the Br-IBAE technique is well suited as a GaSb surface final-polish technique in overgrowth applications that require “epi-ready” GaSb (100) surfaces for molecular beam epitaxy (MBE) as well as applications such as quantum wires and dots that require high-quality GaSb/AlInGaSb MBE overgrowth over patterned GaSb (100) surfaces.

Growth of GaAsP by Solid Source Molecular Beam Epitaxy

2012 ◽  
Vol 531-532 ◽  
pp. 159-162
Author(s):  
Gang Cheng Jiao ◽  
Zheng Tang Liu ◽  
Feng Shi ◽  
Lian Dong Zhang ◽  
Wei Cheng ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Internal Defect ◽  
High Quality ◽  
X Ray ◽  
Photoelectronic Device ◽  
Quality Surface

The GaAsP crystal material grown on GaAs substrate has been extensive applications in the area of photoelectronic device. There because GaAsP have advantageous photoelectronic performance and adjustable band gap. We report growth of GaAs1-xPx grown on GaAs substrate by solid source molecular beam epitaxy (SSMBE). On the basis of the optimized Ⅴ/Ⅲ flux ratio, appropriate growth rate, and the substrate temperature for sample growth, different composition GaAs1-xPx layers had been grown on GaAs top. Lattice-mismatched became the big challenges to high-quality epitaxial growth of the GaAs1-x Px materials on GaAs substrate. The crystalline quality, surface morphology were performed by applying high resolution X-ray diffractometry (HRXRD) and high resolution optical microscopy. The etched region and internal defect were also investigated.

Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (47) ◽  
pp. 10774-10779 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Jingling Li ◽  
Yunfang Guan ◽  
Shuguang Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Gaas Substrates

The effects of the thickness of the large-mismatched amorphous In0.6Ga0.4As buffer layer on the In0.3Ga0.7As epi-films grown on the GaAs substrate have been systematically investigated.

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

scholarly journals Tuning the transport and magnetism in a Cr–Bi2Se3topological insulator by Sb doping

RSC Advances ◽  
2017 ◽  
Vol 7 (75) ◽  
pp. 47789-47795 ◽  
Author(s):  
Y. Tung ◽  
C. W. Chong ◽  
C. W. Liao ◽  
C. H. Chang ◽  
S. Y. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Sb Doping

High-quality crystalline (Cr,Sb)-doped Bi2Se3(Cr-BSS) films were synthesized using molecular beam epitaxy (MBE).

Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 139-143 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Kazushi Nakano ◽  
Takao Miyajima ◽  
Katsuhiro Akimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam
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