Highly uniform and high optical quality In[sub 0.22]Ga[sub 0.78]As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy

2001 ◽  
Vol 19 (5) ◽  
pp. 1824 ◽  
Author(s):  
T. Nitta ◽  
Y. Ohno ◽  
S. Shimomura ◽  
S. Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Optical Quality ◽  
High Optical Quality ◽  
Highly Uniform

Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates

2008 ◽  
Vol 1 ◽  
pp. 091202 ◽  
Author(s):  
Yoshio Nishimoto ◽  
Ken Nakahara ◽  
Daiju Takamizu ◽  
Atsushi Sasaki ◽  
Kentaro Tamura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
High Optical Quality

High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy

2008 ◽  
Vol 1068 ◽  
Author(s):  
Agam Prakash Vajpeyi ◽  
G. Tsiakatouras ◽  
A Adikimenakis ◽  
K. Tsagaraki ◽  
M Androulidaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
High Surface ◽  
Thermal Strain ◽  
Average Diameter ◽  
Optical Quality ◽  
Average Height ◽  
High Optical Quality ◽  
Mismatch Strain

ABSTRACTThe spontaneous growth of GaN nanopillars on (111) Si by plasma assisted molecular beam epitaxy has been investigated. The growth of GaN nanopillars on Si is driven by the lattice mismatch strain energy on Si and the high surface energy of the nitrogen stabilized (0001) GaN surface. A higher growth rate of nanopillars compared to a compact GaN film suggests the diffusion of Ga atoms from the uncovered substrate areas to the nucleated GaN nanopillars. The GaN nanopillars were characterized by field-emission scanning electron microscopy (FE-SEM), photoluminescence, and micro Raman spectroscopy. SEM image revealed that average diameter of GaN nanopillars was in the range of 70-100nm and an average height of 600nm. The photoluminescence (PL) spectra indicate the good emission property of the nanopillars. The low temperate PL spectrum exhibited an emission peak at 3.428eV besides a sharp excitonic peak. PL and Raman spectra indicate that GaN nanopillars are fully relaxed from lattice and thermal strain.

Extremely uniform GaAs-AlGaAs heterostructure layers with high optical quality by molecular beam epitaxy

1983 ◽  
Vol 61 (2) ◽  
pp. 393-396 ◽  
Author(s):  
T. Fujii ◽  
S. Hiyamizu ◽  
O. Wada ◽  
T. Sugahara ◽  
S. Yamakoshi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
High Optical Quality

Highly Uniform GaAs/AlAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7199-7203 ◽  
Author(s):  
Yi Liu ◽  
Yoshinori Nishimoto ◽  
Satoshi Shimomura ◽  
Kenji Gamo ◽  
Kazuo Murase ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Patterned Substrates ◽  
Highly Uniform

Optical and electrical properties of semi-insulating GaN:C grown by MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
R. Armitage ◽  
Qing Yang ◽  
H. Feick ◽  
S. Y. Tzeng ◽  
J. Lim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Transport Model ◽  
Growth Conditions ◽  
Optical Quality ◽  
Optical And Electrical Properties ◽  
High Optical Quality ◽  
Pair Defect ◽  
Additional Support

ABSTRACTSemi-insulating wurtzite GaN:C of high optical quality is obtained with CCl4or CS2 doping sources in plasma-assisted molecular-beam epitaxy in Ga-rich growth conditions. The highest resistivity (107Ω-cm) is found for [C] in the low 1018cm−3range. An increasing fraction of carbon appears to form electrically inactive pair defects for higher doping levels causing the concentration of uncompensated residual donors to be higher in films with [C] in the 1019cm−3range compared with [C] in the 1018cm−3range. Blue (2.9 eV) and yellow (2.2 eV) luminescence bands are associated with carbon-related defects, and additional support is provided for the association of the blue luminescence with the carbon-acceptor deactivating pair defect. Finally, the temperature dependence of the resistivity is described within the grain-boundary controlled transport model of Salzmanet al., Appl. Phys. Lett.76, 1431 (2000).

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