Use of a variable shaped beam electron lithography system for diffractive optics components manufacturing

1993 ◽  
Vol 11 (6) ◽  
pp. 2397 ◽  
Author(s):  
Jacques Trotel
Keyword(s):  
Diffractive Optics ◽  
Beam Electron ◽  
Shaped Beam ◽  
Electron Lithography ◽  
Lithography System

Feasibility of multi-beam electron lithography

1984 ◽  
Vol 2 (4) ◽  
pp. 259-279 ◽  
Author(s):  
B.J.G.M. Roelofs ◽  
J.E. Barth
Keyword(s):  
Beam Electron ◽  
Electron Lithography

Beam shaping techniques in scanning electron lithography systems

1978 ◽  
Vol 36 (1) ◽  
pp. 162-163
Author(s):  
H. C. Pfeiffer
Keyword(s):  
Spatial Resolution ◽  
Beam Shaping ◽  
Pattern Generation ◽  
Image Point ◽  
Beam Spot ◽  
Shaped Beam ◽  
Projection Techniques ◽  
Computer Controlled ◽  
Electron Lithography ◽  
Scanning Electron

A variety of beam shaping techniques are described which we have developed to overcome writing speed limitations inherent to the serial exposure of scanning electron beam lithography systems. We will present experimental results demonstrating the technical feasibility of the various shaping techniques. Figure 1 illustrates E-beam pattern generation by a Gaussian round beam and various shaped beam configurations. The SEM-type, Gaussian round beam exposes one image point at a time. The size of the beam spot is identical with the spatial resolution of the system and is typically 4 to 5 times smaller than the minimum pattern features. For shaped-beam systems, the spatial resolution given by the edge slope of the beam profile is decoupled from the size and shape of the beam spot. Consequently, a plurality of image points can be projected in parallel without loss of resolution. This combination of scanning and projection techniques provides a fast exposure rate without sacrificing the flexibility of computer-controlled pattern generation.

A High Throughput Electron Lithography System Using A Field Emission Gun

1989 ◽  
Author(s):  
W. B. Thompson ◽  
Y. Nakagawa ◽  
M. Hassel Shearer ◽  
H. Nakazawa ◽  
H. Takemura ◽  
...  
Keyword(s):  
Field Emission ◽  
High Throughput ◽  
Electron Lithography ◽  
Lithography System

Symmetries and Extinction Rules in CBED

1982 ◽  
Vol 40 ◽  
pp. 684-685
Author(s):  
K. Ishizuka
Keyword(s):  
Electron Diffraction ◽  
Incident Beam ◽  
Convergent Beam Electron Diffraction ◽  
Beam Direction ◽  
Beam Electron ◽  
Convergent Beam

The technique of convergent-beam electron diffraction (CBED) has been established. However there is a distinct discrepancy concerning the CBED pattern symmetries associated with translation symmetries parallel to the incident beam direction: Buxton et al. assumed no detectable effects of translation components, while Goodman predicted no associated symmetries. In this report a procedure used by Gjønnes & Moodie1 to obtain dynamical extinction rules will be extended in order to derive the CBED pattern symmetries as well as the dynamical extinction rules.

Micropatterning of Permalloy Films by Electron Lithography

1976 ◽  
Vol 34 ◽  
pp. 448-449
Author(s):  
J. K. Maurin
Keyword(s):  
Electron Beam ◽  
Subsequent Development ◽  
Electron Optical System ◽  
Microelectronic Device ◽  
Magnetic Bubble ◽  
Control Beam ◽  
Photosensitive Material ◽  
Direct Exposure ◽  
Electron Lithography ◽  
Scanning Electron

Conductor, resistor, and dielectric patterns of microelectronic device are usually defined by exposure of a photosensitive material through a mask onto the device with subsequent development of the photoresist and chemical removal of the undesired materials. Standard optical techniques are limited and electron lithography provides several important advantages, including the ability to expose features as small as 1,000 Å, and direct exposure on the wafer with no intermediate mask. This presentation is intended to report how electron lithography was used to define the permalloy patterns which are used to manipulate domains in magnetic bubble memory devices.The electron optical system used in our experiment as shown in Fig. 1 consisted of a high resolution scanning electron microscope, a computer, and a high precision motorized specimen stage. The computer is appropriately interfaced to address the electron beam, control beam exposure, and move the specimen stage.

A library of convergent-beam electron diffraction patterns

1986 ◽  
Vol 44 ◽  
pp. 688-691
Author(s):  
John F. Mansfield
Keyword(s):  
Electron Diffraction ◽  
Materials Science ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Transmission Electron ◽  
Yield Information ◽  
Analytical Electron ◽  
Diffraction Patterns ◽  
Convergent Beam ◽  
Electron Energy Loss

One of the most important advancements of the transmission electron microscopy (TEM) in recent years has been the development of the analytical electron microscope (AEM). The microanalytical capabilities of AEMs are based on the three major techniques that have been refined in the last decade or so, namely, Convergent Beam Electron Diffraction (CBED), X-ray Energy Dispersive Spectroscopy (XEDS) and Electron Energy Loss Spectroscopy (EELS). Each of these techniques can yield information on the specimen under study that is not obtainable by any other means. However, it is when they are used in concert that they are most powerful. The application of CBED in materials science is not restricted to microanalysis. However, this is the area where it is most frequently employed. It is used specifically to the identification of the lattice-type, point and space group of phases present within a sample. The addition of chemical/elemental information from XEDS or EELS spectra to the diffraction data usually allows unique identification of a phase.

Convergent-beam electron diffraction at high spatial resolution

1992 ◽  
Vol 50 (2) ◽  
pp. 1152-1153 ◽  
Author(s):  
J W Steeds
Keyword(s):  
Electron Diffraction ◽  
High Temperature Superconductors ◽  
Bloch Wave ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Energy Filtering ◽  
Small Probe ◽  
Transmission Electron ◽  
Electron Microscopes ◽  
Convergent Beam

That the techniques of convergent beam electron diffraction (CBED) are now widely practised is evident, both from the way in which they feature in the sale of new transmission electron microscopes (TEMs) and from the frequency with which the results appear in the literature: new phases of high temperature superconductors is a case in point. The arrival of a new generation of TEMs operating with coherent sources at 200-300kV opens up a number of new possibilities.First, there is the possibility of quantitative work of very high accuracy. The small probe will essentially eliminate thickness or orientation averaging and this, together with efficient energy filtering by a doubly-dispersive electron energy loss spectrometer, will yield results of unsurpassed quality. The Bloch wave formulation of electron diffraction has proved itself an effective and efficient method of interpreting the data. The treatment of absorption in these calculations has recently been improved with the result that <100> HOLZ polarity determinations can now be performed on III-V and II-VI semiconductors.

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